Inventor · disambiguated record
Ruey-Hsin Liou
Also filed as: LIOU RUEY-HSIN
5 granted patents·109 citations·filing 1997–2001
82Inventor score
Top patents by PatentIndex Score
5 records- 0177US6265752B1Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the sameTAIWAN SEMICONDUCTOR MFG CO IN·Filed 1999·Granted Jul 24, 2001·51 cites·7 claims
- 0274US6271068B1Method for making improved polysilicon emitters for bipolar transistors on BiCMOS integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 7, 2001·21 cites·17 claims
- 0357US6004829AMethod of increasing end point detection capability of reactive ion etching by adding pad areaTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 21, 1999·21 cites·7 claims
- 0442US6242313B1Use of polysilicon field plates to improve high voltage bipolar device breakdown voltageTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·12 cites·19 claims
- 0533US6162695AField ring to improve the breakdown voltage for a high voltage bipolar deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 19, 2000·4 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →