Inventor · disambiguated record
Ruey-Hsin Liu
Also filed as: LIU RUEY-HSIN
157 granted patents·28 pending applications·720 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD102TAIWAN SEMICONDUCTOR MFG46NG CHUN-WAI9CHENG CHIH-CHANG7SU RU-YI7
Top patents by PatentIndex Score
185 records- 0199US11088085B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·6 cites·20 claims
- 0296US9293376B2Apparatus and method for power MOS transistorSU PO-CHIH·Filed 2012·Granted Mar 22, 2016·43 cites·17 claims
- 0396US7221021B2Method of forming high voltage devices with retrograde wellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·120 cites·13 claims
- 0495US9171931B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 27, 2015·12 cites·21 claims
- 0593US8669611B2Apparatus and method for power MOS transistorNG CHUN-WAI·Filed 2012·Granted Mar 11, 2014·11 cites·15 claims
- 0693US6924531B2LDMOS device with isolation guard ringsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·81 cites·13 claims
- 0792US9373619B2High voltage resistor with high voltage junction terminationSU RU-YI·Filed 2011·Granted Jun 21, 2016·11 cites·20 claims
- 0891US11107899B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·2 cites·20 claims
- 0991US9450056B2Lateral DMOS device with dummy gateNG CHUN-WAI·Filed 2012·Granted Sep 20, 2016·11 cites·20 claims
- 1091US8664718B2Power MOSFETs and methods for forming the sameCHENG CHIH-CHANG·Filed 2012·Granted Mar 4, 2014·12 cites·20 claims
- 1191US7372104B2High voltage CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·22 cites·8 claims
- 1291US2025357364A1A novel layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1390US9871133B2Lateral DMOS device with dummy gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·5 cites·20 claims
- 1489US7602037B2High voltage semiconductor devices and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 13, 2009·15 cites·19 claims
- 1588US10658482B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·3 cites·20 claims
- 1688US9000517B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·6 cites·20 claims
- 1788US8890240B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 18, 2014·5 cites·20 claims
- 1888US8823096B2Vertical power MOSFET and methods for forming the sameSU PO-CHIH·Filed 2012·Granted Sep 2, 2014·7 cites·17 claims
- 1988US8629513B2HV interconnection solution using floating conductorsSU RU-YI·Filed 2011·Granted Jan 14, 2014·10 cites·14 claims
- 2088US8598679B2Stacked and tunable power fuseCHENG CHIH-CHANG·Filed 2010·Granted Dec 3, 2013·8 cites·20 claims
- 2188US8445955B2Quasi-vertical structure for high voltage MOS deviceCHENG CHIH-CHANG·Filed 2010·Granted May 21, 2013·9 cites·14 claims
- 2288US6323074B1High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drainTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·44 cites·5 claims
- 2387US10170589B2Vertical power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·3 cites·18 claims
- 2487US9412844B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·3 cites·20 claims
- 2587US8587073B2High voltage resistorCHENG CHIH-CHANG·Filed 2010·Granted Nov 19, 2013·8 cites·20 claims
- 2687US8461647B2Semiconductor device having multi-thickness gate dielectricCHOU HSUEH-LIANG·Filed 2010·Granted Jun 11, 2013·11 cites·13 claims
- 2786US9653459B2MOSFET having source region formed in a double wells regionCHOU HSUEH-LIANG·Filed 2012·Granted May 16, 2017·7 cites·18 claims
- 2886US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
- 2985US9917212B1JFET structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·4 cites·20 claims
- 3085US9698227B2FinFET with trench field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·5 cites·20 claims
- 3185US9466715B2MOS transistor having a gate dielectric with multiple thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 11, 2016·6 cites·8 claims
- 3284US12469798B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 3384US10164085B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 3483US2024371966A1Mehtod of making triple well isolated diode and triple well isolated diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3582US11088277B2Power MOSFETs structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·1 cites·20 claims
- 3682US8114745B2High voltage CMOS devicesWU CHEN-BAU·Filed 2010·Granted Feb 14, 2012·8 cites·24 claims
- 3782US7719064B2High voltage CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 18, 2010·8 cites·16 claims
- 3881US10985256B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·1 cites·20 claims
- 3981US8896060B2Trench power MOSFETNG CHUN-WAI·Filed 2012·Granted Nov 25, 2014·3 cites·19 claims
- 4081US8680616B2High side gate driver deviceSU RU-YI·Filed 2010·Granted Mar 25, 2014·5 cites·7 claims
- 4181US8507988B2High voltage devices, systems, and methods for forming the high voltage devicesYAO CHIH-WEN·Filed 2010·Granted Aug 13, 2013·9 cites·17 claims
- 4281US7525155B2High voltage transistor structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 28, 2009·8 cites·19 claims
- 4379US10714432B1Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·1 cites·20 claims
- 4479US10510880B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 4579US7521741B2Shielding structures for preventing leakages in high voltage MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 21, 2009·9 cites·20 claims
- 4679US2025343152A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4778US9048255B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 2, 2015·2 cites·20 claims
- 4878US7476591B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 13, 2009·6 cites·20 claims
- 4978US2024014260A1High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5078US2023378296A1Semiconductor device having multiple wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 185 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →