Inventor · disambiguated record
Ru-Yi Su
Also filed as: SU RU-YI
55 granted patents·6 pending applications·187 citations·filing 2008–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30TAIWAN SEMICONDUCTOR MFG15SU RU-YI10CHENG CHIH-CHANG2HUO KER HSIAO2
Top patents by PatentIndex Score
61 records- 0197US11854909B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0294US10411681B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·11 cites·20 claims
- 0393US9882553B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·11 cites·20 claims
- 0492US9373619B2High voltage resistor with high voltage junction terminationSU RU-YI·Filed 2011·Granted Jun 21, 2016·11 cites·20 claims
- 0592US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 0692US8624322B1High voltage device with a parallel resistorSU RU-YI·Filed 2012·Granted Jan 7, 2014·15 cites·20 claims
- 0792US8159029B2High voltage device having reduced on-state resistanceSU RU-YI·Filed 2008·Granted Apr 17, 2012·21 cites·20 claims
- 0891US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 0991US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 1091US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 1188US10319644B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·3 cites·20 claims
- 1288US8629513B2HV interconnection solution using floating conductorsSU RU-YI·Filed 2011·Granted Jan 14, 2014·10 cites·14 claims
- 1388US8598679B2Stacked and tunable power fuseCHENG CHIH-CHANG·Filed 2010·Granted Dec 3, 2013·8 cites·20 claims
- 1487US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 1587US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 1687US8587073B2High voltage resistorCHENG CHIH-CHANG·Filed 2010·Granted Nov 19, 2013·8 cites·20 claims
- 1786US9627275B1Hybrid semiconductor structure on a common substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·3 cites·19 claims
- 1886US8575694B2Insulated gate bipolar transistor structure having low substrate leakageHUO KER HSIAO·Filed 2012·Granted Nov 5, 2013·6 cites·19 claims
- 1985US8969913B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 3, 2015·5 cites·21 claims
- 2083US12507456B2Electrode structure for vertical group III-V deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 2183US8803232B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesHUO KER HSIAO·Filed 2011·Granted Aug 12, 2014·6 cites·18 claims
- 2281US8680616B2High side gate driver deviceSU RU-YI·Filed 2010·Granted Mar 25, 2014·5 cites·7 claims
- 2380US7816744B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 19, 2010·7 cites·18 claims
- 2478US2024014260A1High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2576US11908905B2Electrode structure for vertical group III-V deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 2676US9257533B2Method of making an insulated gate bipolar transistor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 2773US9035379B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 19, 2015·2 cites·20 claims
- 2870US11676997B2High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 2970US2024379836A1Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3069US11450749B2Electrode structure for vertical group III-V deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 3167US12267006B2Forming integrated electronic devices for converting and downscaling alternating currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3267US11069805B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 3367US8158475B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsSU RU-YI·Filed 2010·Granted Apr 17, 2012·2 cites·17 claims
- 3466US11430702B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·0 cites·20 claims
- 3563US2025202349A1Forming integrated electronic devices for converting and downscaling alternating currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3662US9306012B2Strip-ground field plateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 5, 2016·1 cites·20 claims
- 3759US9385178B2High voltage resistor with PIN diode isolationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·0 cites·20 claims
- 3858US9793385B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 3958US9214547B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·0 cites·20 claims
- 4057US12501644B2Gallium nitride-based device with step-wise field plate and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 16, 2025·0 cites·20 claims
- 4157US10103223B2High voltage resistor with pin diode isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 16, 2018·0 cites·20 claims
- 4256US10686032B2High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 16, 2020·0 cites·20 claims
- 4356US10510882B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 4456US9379188B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 28, 2016·0 cites·19 claims
- 4555US10121890B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 6, 2018·0 cites·20 claims
- 4655US9331195B2Source tip optimization for high voltage transistor devices which includes a P-body extension regionTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 3, 2016·0 cites·20 claims
- 4755US9299694B2Stacked and tunable power fuseTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 29, 2016·0 cites·20 claims
- 4855US9190476B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 17, 2015·0 cites·20 claims
- 4954US10868134B2Method of making transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 15, 2020·0 cites·20 claims
- 5054US9111849B2High voltage resistor with biased-wellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·0 cites·19 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →