Inventor · disambiguated record
Rui Tze Toh
Also filed as: TOH RUI TZE
15 granted patents·7 pending applications·48 citations·filing 2014–2024
89Inventor score
Top patents by PatentIndex Score
22 records- 0196US9472512B1Integrated circuits with contacts through a buried oxide layer and methods of producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Oct 18, 2016·29 cites·20 claims
- 0292US12327776B1Heat sink for face bonded semiconductor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jun 10, 2025·2 cites·17 claims
- 0384US9899527B2Integrated circuits with gapsGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 20, 2018·4 cites·9 claims
- 0484US9087906B2Grounding of silicon-on-insulator structureGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jul 21, 2015·6 cites·23 claims
- 0573US12211929B1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Granted Jan 28, 2025·0 cites·20 claims
- 0673US2025359098A1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 0771US10020394B2Extended drain metal-oxide-semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jul 10, 2018·1 cites·20 claims
- 0871US9960115B1Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metalGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted May 1, 2018·2 cites·20 claims
- 0968US9899514B2Extended drain metal-oxide-semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Feb 20, 2018·1 cites·20 claims
- 1065US12349444B1Under-source body contactGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jul 1, 2025·0 cites·15 claims
- 1164US10529738B2Integrated circuits with selectively strained device regions and methods for fabricating sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 7, 2020·1 cites·9 claims
- 1263US9685364B2Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 20, 2017·1 cites·17 claims
- 1361US11776844B2Contact via structures of semiconductor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 3, 2023·0 cites·11 claims
- 1460US9922868B2Integrated circuits using silicon on insulator substrates and methods of manufacturing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Mar 20, 2018·1 cites·12 claims
- 1557US2025359270A1Mos gate structure with dummy thermal viaGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1656US2025210507A1Stacked trench capacitors and methods of making thereofGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1754US12500119B2Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related methodGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1852US2025081556A1Field-effect transistors with an asymmetric defect regionGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 1952US2025221013A1Three dimensional serpentine resistorGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 2050US2024429208A1Three-dimensional integrated circuit with top chip including schottky diode body contactGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2146US2025031432A1Extended-drain metal-oxide-semiconductor devices with a dual-thickness gate dielectric layerGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 2244US10062710B2Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Aug 28, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →