Inventor · disambiguated record
Ru-Chin Tu
Also filed as: TU RU-CHIN
11 granted patents·6 pending applications·117 citations·filing 2003–2005
90Inventor score
Top patents by PatentIndex Score
17 records- 0193US7307291B2Gallium-nitride based ultraviolet photo detectorFORMOSA EPITAXY INC·Filed 2005·Granted Dec 11, 2007·24 cites·7 claims
- 0286US7105850B2GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivityFORMOSA EPITAXY INC·Filed 2005·Granted Sep 12, 2006·13 cites·12 claims
- 0384US7049638B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted May 23, 2006·12 cites·8 claims
- 0469US6979835B1Gallium-nitride based light-emitting diode epitaxial structureFORMOSA EPITAXY INC·Filed 2004·Granted Dec 27, 2005·18 cites·10 claims
- 0568US7042019B1Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structureFORMOSA EPITAXY INC·Filed 2004·Granted May 9, 2006·12 cites·10 claims
- 0667US6969627B2Light-emitting diode and the manufacturing method of the sameIND TECH RES INST·Filed 2003·Granted Nov 29, 2005·14 cites·10 claims
- 0756US7180096B2Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capabilityFORMOSA EPITAXY INC·Filed 2004·Granted Feb 20, 2007·7 cites·4 claims
- 0856US7180097B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2004·Granted Feb 20, 2007·7 cites·4 claims
- 0955US7087924B2Gallium-nitride based light emitting diode structure with enhanced light illuminanceFORMOSA EPITAXY INC·Filed 2004·Granted Aug 8, 2006·6 cites·6 claims
- 1050US7042018B2Structure of GaN light-emitting diodeFORMOSA EPITAXY INC·Filed 2004·Granted May 9, 2006·2 cites·9 claims
- 1147US7087922B2Light-emitting diode structureFORMOSA EPITAXY INC·Filed 2004·Granted Aug 8, 2006·2 cites·10 claims
- 1247US2006038195A1Light-emitting diode and the manufacturing method of the samePAN SHYI-MING·Filed 2005·Application pending·0 cites
- 1342US2006054897A1Gallium-nitride based light emitting diode light emitting layer structureYU CHENG-TSANG·Filed 2004·Application pending·0 cites
- 1439US2006049418A1Epitaxial structure and fabrication method of nitride semiconductor deviceWEN TZI-CHI·Filed 2004·Application pending·0 cites
- 1539US2006043394A1Gallium-nitride based light emitting diode structureWU LIANG-WEN·Filed 2004·Application pending·0 cites
- 1639US2006049401A1Nitride epitaxial layer structure and method of manufacturing the sameWEN TZU-CHI·Filed 2004·Application pending·0 cites
- 1736US2006076564A1Gallium-nitride based semiconductor device buffer layer structureWU LIANG-WEN·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →