Inventor · disambiguated record
Ryan Chia-Jen Chen
Also filed as: CHEN RYAN · CHEN RYAN C · CHEN RYAN CHIA-JEN
154 granted patents·34 pending applications·602 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD120TAIWAN SEMICONDUCTOR MFG31Lin yu chao5LIN YIH-ANN4HUANG KUO BIN3
Top patents by PatentIndex Score
188 records- 0197US11404321B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·4 cites·20 claims
- 0297US10325912B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 18, 2019·19 cites·20 claims
- 0397US9917085B2Metal gate isolation structure and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·18 cites·20 claims
- 0496US11804548B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·2 cites·20 claims
- 0596US11329140B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·4 cites·20 claims
- 0696US11302816B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·3 cites·20 claims
- 0796US10269787B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·13 cites·20 claims
- 0896US9825173B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 21, 2017·11 cites·20 claims
- 0995US12015071B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 1095US11996466B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 1195US10468527B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·10 cites·20 claims
- 1295US10134604B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·10 cites·20 claims
- 1395US8748989B2Fin field effect transistorsLin yu chao·Filed 2012·Granted Jun 10, 2014·24 cites·20 claims
- 1494US11527443B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 1594US11502076B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 15, 2022·7 cites·20 claims
- 1694US11114549B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 7, 2021·9 cites·20 claims
- 1794US10535654B2Cut metal gate with slanted sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·11 cites·20 claims
- 1894US9190496B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·14 cites·20 claims
- 1994US7759239B1Method of reducing a critical dimension of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 20, 2010·36 cites·20 claims
- 2093US12017192B1Carbonation mixing nozzlesSHARKNINJA OPERATING LLC·Filed 2023·Granted Jun 25, 2024·6 cites·19 claims
- 2193US10276449B1Method for forming fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 2293US9704974B2Process of manufacturing Fin-FET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·11 cites·20 claims
- 2393US8900937B2FinFET device structure and methods of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·15 cites·22 claims
- 2493US8546891B2Fin profile structure and method of making sameCHANG CHIA-WEI·Filed 2012·Granted Oct 1, 2013·19 cites·14 claims
- 2593US8450834B2Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layersNG JIN-AUN·Filed 2010·Granted May 28, 2013·16 cites·25 claims
- 2693US8383502B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·11 cites·15 claims
- 2793US8053323B1Patterning methodology for uniformity controlTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·15 cites·20 claims
- 2893US7625791B2High-k dielectric metal gate device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 1, 2009·26 cites·14 claims
- 2992US11355616B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
- 3092US10916477B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·10 cites·20 claims
- 3192US9923079B2Composite dummy gate with conformal polysilicon layer for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·8 cites·20 claims
- 3292US9601388B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·6 cites·20 claims
- 3392US8119473B2High temperature anneal for aluminum surface protectionHUANG KUO BIN·Filed 2009·Granted Feb 21, 2012·30 cites·15 claims
- 3491US8802510B2Methods for controlling line dimensions in spacer alignment double patterning semiconductor processingCHANG CHIA-WEI·Filed 2012·Granted Aug 12, 2014·14 cites·20 claims
- 3590US10658509B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·4 cites·20 claims
- 3690US8273632B2Patterning methodology for uniformity controlLin yu chao·Filed 2011·Granted Sep 25, 2012·12 cites·20 claims
- 3789US11120997B2Surface treatment for etch tuningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 14, 2021·6 cites·20 claims
- 3889US9633905B2Semiconductor fin structures and methods for forming the sameCHEN RYAN CHIA-JEN·Filed 2012·Granted Apr 25, 2017·8 cites·9 claims
- 3989US9595443B2Metal gate structure of a semiconductor deviceZHU MING·Filed 2011·Granted Mar 14, 2017·8 cites·20 claims
- 4088US11282967B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 4188US11069579B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·4 cites·20 claims
- 4288US10714347B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 4388US10515952B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·4 cites·20 claims
- 4487US12471310B2Method of making a FinFET device including a step of removing a portion of a finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 4587US12471358B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 4687US11923359B2Method for forming fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
- 4787US10460994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·3 cites·20 claims
- 4886US12363994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 4986US12132050B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 5086US9263551B2Simultaneous formation of source/drain openings with different profilesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 16, 2016·9 cites·20 claims
Showing the top 50 of 188 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →