Inventor · disambiguated record
Ryoji Hasumi
Also filed as: HASUMI RYOJI
6 granted patents·7 pending applications·68 citations·filing 2000–2023
81Inventor score
Top patents by PatentIndex Score
13 records- 0194US8536018B1Maskless inter-well deep trench isolation structure and methods of manufactureANDERSON BRENT A·Filed 2012·Granted Sep 17, 2013·19 cites·19 claims
- 0283US7222328B2Semiconductor integrated circuit design tool, computer implemented method for designing semiconductor integrated circuit, and method for manufacturing semiconductor integrated circuitTOSHIBA KK·Filed 2005·Granted May 22, 2007·17 cites·17 claims
- 0381US6894331B2MIM capacitor having flat diffusion prevention filmsTOSHIBA KK·Filed 2000·Granted May 17, 2005·27 cites·23 claims
- 0461US8193616B2Semiconductor device on direct silicon bonded substrate with different layer thicknessHAMAGUCHI MASAFUMI·Filed 2009·Granted Jun 5, 2012·3 cites·3 claims
- 0555US2025142999A1Photodetector and method of manufacturing photodetectorSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2023·Application pending·0 cites
- 0648US11997400B2Imaging element and electronic apparatusSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted May 28, 2024·0 cites·20 claims
- 0745US2023170360A1Imaging apparatus and electronic deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2021·Application pending·0 cites
- 0844US7045415B2MIM capacitor having flat diffusion prevention filmsTOSHIBA KK·Filed 2004·Granted May 16, 2006·2 cites·5 claims
- 0944US2009173967A1Strained-channel fet comprising twist-bonded semiconductor layerIBM·Filed 2008·Application pending·0 cites
- 1043US2009267156A1Device structures including dual-depth trench isolation regions and design structures for a static random access memoryIBM·Filed 2008·Application pending·0 cites
- 1143US2009269897A1Methods of fabricating dual-depth trench isolation regions for a memory cellIBM·Filed 2008·Application pending·0 cites
- 1234US2005186748A1Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Application pending·0 cites
- 1328US2012080777A1Triple oxidation on dsb substrateHAMAGUCHI MASAFUMI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →