Inventor · disambiguated record
Ryoji Hiroyama
Also filed as: HIROYAMA RYOJI
29 granted patents·7 pending applications·183 citations·filing 1994–2021
96Inventor score
Files withSANYO ELECTRIC CO28HIROYAMA RYOJI2MIYAKE YASUTO2NUVOTON TECHNOLOGY CORP JAPAN1SANYO ELECTRONIC CO LTD1
Top patents by PatentIndex Score
36 records- 0192US7488613B2Nitride-based light-emitting device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2007·Granted Feb 10, 2009·19 cites·4 claims
- 0288US7154123B2Nitride-based semiconductor light-emitting deviceSANYO ELECTRIC CO·Filed 2005·Granted Dec 26, 2006·15 cites·20 claims
- 0385US8022427B2Nitride-based semiconductor device and method of manufacturing the sameSANYOELECTRIC CO LTD·Filed 2009·Granted Sep 20, 2011·19 cites·20 claims
- 0478US7892874B2Nitride-based light-emitting device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Granted Feb 22, 2011·5 cites·10 claims
- 0574US7592630B2Nitride-based light-emitting device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2005·Granted Sep 22, 2009·4 cites·9 claims
- 0671US5559818ASemiconductor laser deviceSANYO ELECTRIC CO·Filed 1994·Granted Sep 24, 1996·28 cites·17 claims
- 0770US5555271ASemiconductor laser deviceSANYO ELECTRIC CO·Filed 1994·Granted Sep 10, 1996·28 cites·21 claims
- 0869US7885304B2Nitride-based semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Granted Feb 8, 2011·3 cites·15 claims
- 0969US7512167B2Integrated semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Mar 31, 2009·3 cites·13 claims
- 1063US7260130B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2004·Granted Aug 21, 2007·6 cites·21 claims
- 1162US7903709B2Semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Granted Mar 8, 2011·1 cites·10 claims
- 1259US6771676B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2002·Granted Aug 3, 2004·5 cites·16 claims
- 1357US5963572ASemiconductor laser device and manufacturing method thereofSANYO ELECTRIC CO·Filed 1996·Granted Oct 5, 1999·23 cites·8 claims
- 1456US12142895B2Semiconductor laser deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2021·Granted Nov 12, 2024·0 cites·29 claims
- 1555US8013344B2Method of manufacturing semiconductor device and semiconductor deviceSANYO ELECTRIC CO·Filed 2008·Granted Sep 6, 2011·0 cites·10 claims
- 1655US7961768B2Integrated semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2008·Granted Jun 14, 2011·0 cites·5 claims
- 1754US7924898B2Nitride based semiconductor laser device with oxynitride protective coatings on facetsSANYO ELECTRIC CO·Filed 2008·Granted Apr 12, 2011·0 cites·8 claims
- 1854US6967985B2Surface emission semiconductor laser deviceSANYO ELECTRIC CO·Filed 2003·Granted Nov 22, 2005·3 cites·16 claims
- 1954US6768755B2Semiconductor laser deviceSANYO ELECTRIC CO·Filed 2000·Granted Jul 27, 2004·3 cites·25 claims
- 2051US6778575B2AlGaInP-based high-output red semiconductor laser deviceSANYO ELECTRIC CO·Filed 2002·Granted Aug 17, 2004·2 cites·15 claims
- 2150US6654397B2Semiconductor laser device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2001·Granted Nov 25, 2003·2 cites·20 claims
- 2249US7978744B2Nitride based semiconductor laser device with oxynitride protective films on facetsSANYO ELECTRIC CO·Filed 2008·Granted Jul 12, 2011·0 cites·19 claims
- 2348US8445303B2Method of manufacturing semiconductor device and semiconductor deviceMIYAKE YASUTO·Filed 2012·Granted May 21, 2013·0 cites·9 claims
- 2448US2011200065A1Nitride based semiconductor laser deviceSANYO ELECTRIC CO·Filed 2011·Application pending·0 cites
- 2548US2011211609A1Integrated semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2011·Application pending·0 cites
- 2647US8134171B2Method of manufacturing semiconductor device and semiconductor deviceMIYAKE YASUTO·Filed 2011·Granted Mar 13, 2012·0 cites·11 claims
- 2747US2007274359A1Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 2846US2009323750A1Semiconductor laser device and method of manufacturing the same as well as optical pickupSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 2946US2010265981A1Nitride-based semiconductor light-emitting diode, nitride-based semiconductor laser device, method of manufacturing the same, and method of forming nitride-based semiconductor layerSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 3045US2009028204A1Semiconductor laser deviceSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 3144US8750343B2Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layerHIROYAMA RYOJI·Filed 2008·Granted Jun 10, 2014·0 cites·9 claims
- 3244US8193016B2Semiconductor laser device and method of manufacturing the sameHIROYAMA RYOJI·Filed 2011·Granted Jun 5, 2012·0 cites·13 claims
- 3344US5586136ASemiconductor laser device with a misoriented substrateSANYO ELECTRIC CO·Filed 1994·Granted Dec 17, 1996·9 cites·30 claims
- 3441US7796669B2Semiconductor laser diodeSANYO ELECTRONIC CO LTD·Filed 2006·Granted Sep 14, 2010·0 cites·11 claims
- 3540US2005141240A1Light emitting device and fabrication method thereofFiled 2004·Application pending·0 cites
- 3631US6044099ASemiconductor laser deviceSANYO ELECTRIC CO·Filed 1997·Granted Mar 28, 2000·5 cites·47 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →