Inventor · disambiguated record
Ryoko Miyanaga
Also filed as: MIYANAGA RYOKO
36 granted patents·759 citations·filing 1998–2012
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD24PANASONIC CORP6MIKAWA TAKUMI2KANZAWA YOSHIHIKO1KAWASHIMA YOSHIO1
Top patents by PatentIndex Score
36 records- 0197US8022502B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementPANASONIC CORP·Filed 2008·Granted Sep 20, 2011·60 cites·23 claims
- 0296US7507999B2Semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2003·Granted Mar 24, 2009·133 cites·12 claims
- 0396US6720586B1Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 13, 2004·98 cites·4 claims
- 0495US6995397B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·114 cites·26 claims
- 0592US8445319B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted May 21, 2013·15 cites·4 claims
- 0690US7160748B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jan 9, 2007·13 cites·11 claims
- 0784US6798811B1Semiconductor laser device, method for fabricating the same, and optical disk apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 28, 2004·18 cites·19 claims
- 0882US6586774B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 1, 2003·21 cites·6 claims
- 0981US8309946B2Resistance variable elementMITANI SATORU·Filed 2009·Granted Nov 13, 2012·7 cites·7 claims
- 1081US7462540B2Silicon carbide semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 9, 2008·7 cites·9 claims
- 1181US6995396B2Semiconductor substrate, semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·25 cites·11 claims
- 1281US6911351B2Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 28, 2005·22 cites·87 claims
- 1379US8253136B2Nonvolatile semiconductor memory device and manufacturing method thereofMIKAWA TAKUMI·Filed 2008·Granted Aug 28, 2012·5 cites·7 claims
- 1475US6709881B2Method for manufacturing semiconductor and method for manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 23, 2004·15 cites·1 claims
- 1575US6169296B1Light-emitting diode deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 2, 2001·57 cites·12 claims
- 1674US8344345B2Nonvolatile semiconductor memory device having a resistance variable layer and manufacturing method thereofPANASONIC CORP·Filed 2008·Granted Jan 1, 2013·4 cites·12 claims
- 1773US8389990B2Nonvolatile semiconductor memory device and manufacturing method thereofMIKAWA TAKUMI·Filed 2012·Granted Mar 5, 2013·3 cites·5 claims
- 1872US7381993B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Jun 3, 2008·4 cites·14 claims
- 1970US7426227B2Semiconductor laser device, optical disk apparatus and optical integrated unitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Sep 16, 2008·3 cites·4 claims
- 2069US8242479B2Nonvolatile memory apparatus and manufacturing method thereofKAWASHIMA YOSHIO·Filed 2008·Granted Aug 14, 2012·3 cites·11 claims
- 2169US7217954B2Silicon carbide semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 15, 2007·11 cites·14 claims
- 2268US7436031B2Device for implementing an inverter having a reduced sizeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·4 cites·14 claims
- 2368US7212556B1Semiconductor laser device optical disk apparatus and optical integrated unitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 1, 2007·11 cites·9 claims
- 2467US7092423B2Semiconductor laser device, optical disk apparatus and optical integrated unitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·10 cites·16 claims
- 2565US6466597B1Semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 15, 2002·27 cites·21 claims
- 2664US7709403B2Silicon carbide-oxide layered structure, production method thereof, and semiconductor devicePANASONIC CORP·Filed 2004·Granted May 4, 2010·11 cites·3 claims
- 2763US7292615B2Semiconductor laser device, method for fabricating the same, and optical disk apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 6, 2007·4 cites·11 claims
- 2862US6072762AOptical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operationsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Jun 6, 2000·15 cites·6 claims
- 2961US8759190B2Current steering element and non-volatile memory element incorporating current steering elementMIYANAGA RYOKO·Filed 2011·Granted Jun 24, 2014·2 cites·15 claims
- 3059US6977186B2Method for manufacturing semiconductor laser optical deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 20, 2005·5 cites·2 claims
- 3155US6900483B2Semiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 31, 2005·6 cites·25 claims
- 3252US6921678B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 26, 2005·2 cites·9 claims
- 3349US7214984B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 8, 2007·3 cites·17 claims
- 3448US6324200B1Semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 27, 2001·13 cites·4 claims
- 3545US7816688B2Semiconductor device and production method thereforPANASONIC CORP·Filed 2002·Granted Oct 19, 2010·2 cites·9 claims
- 3638US6087725ALow barrier ohmic contact for semiconductor light emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jul 11, 2000·6 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →