Inventor · disambiguated record
Ryozo Nakayama
Also filed as: NAKAYAMA RYOZO
8 granted patents·330 citations·filing 1988–1997
90Inventor score
Files withTOSHIBA KK8
Top patents by PatentIndex Score
8 records- 0197US4939690AElectrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variationTOSHIBA KK·Filed 1988·Granted Jul 3, 1990·142 cites·15 claims
- 0284US5508957ANon-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-throughTOSHIBA KK·Filed 1994·Granted Apr 16, 1996·56 cites·6 claims
- 0374US5978265ANon-volatile semiconductor memory device with nand type memory cell arraysTOSHIBA KK·Filed 1991·Granted Nov 2, 1999·35 cites·34 claims
- 0472US5824583ANon-volatile semiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 1997·Granted Oct 20, 1998·26 cites·2 claims
- 0572US5179427ANon-volatile semiconductor memory device with voltage stabilizing electrodeTOSHIBA KK·Filed 1992·Granted Jan 12, 1993·32 cites·29 claims
- 0670US5323039ANon-volatile semiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 1989·Granted Jun 21, 1994·20 cites·8 claims
- 0747US5397723AProcess for forming arrayed field effect transistors highly integrated on substrateTOSHIBA KK·Filed 1991·Granted Mar 14, 1995·13 cites·12 claims
- 0841US5597748AMethod of manufacturing NAND type EEPROMTOSHIBA KK·Filed 1994·Granted Jan 28, 1997·6 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →