Inventor · disambiguated record
Ryohei Nega
Also filed as: NEGA RYOHEI
10 granted patents·3 pending applications·16 citations·filing 2013–2024
84Inventor score
Top patents by PatentIndex Score
13 records- 0195US11296185B2IsolatorTOSHIBA KK·Filed 2020·Granted Apr 5, 2022·5 cites·16 claims
- 0288US11916027B2IsolatorTOSHIBA KK·Filed 2020·Granted Feb 27, 2024·2 cites·18 claims
- 0387US11756986B2IsolatorTOSHIBA KK·Filed 2022·Granted Sep 12, 2023·1 cites·11 claims
- 0480US12142411B2IsolatorTOSHIBA KK·Filed 2020·Granted Nov 12, 2024·1 cites·15 claims
- 0578US9324851B2DC/DC converter circuit of semiconductor device having a first transistor of a normally-off type and a second transistor of a normally-on typeRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 26, 2016·4 cites·5 claims
- 0675US2025029772A1IsolatorTOSHIBA KK·Filed 2024·Application pending·0 cites
- 0772US2023378243A1IsolatorTOSHIBA KK·Filed 2023·Application pending·0 cites
- 0867US9536978B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 3, 2017·2 cites·18 claims
- 0960US9269803B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 23, 2016·1 cites·20 claims
- 1052US10135337B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Nov 20, 2018·0 cites·6 claims
- 1151US9667147B2Semiconductor device with DC/DC converter circuitRENESAS ELECTRONICS CORP·Filed 2016·Granted May 30, 2017·0 cites·6 claims
- 1246US2016133715A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1344US9985108B2Semiconductor device and method for manufacturing semiconductor device including Al electrode formed on AlxGa(1-x)N layerRENESAS ELECTRONICS CORP·Filed 2014·Granted May 29, 2018·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →