Inventor · disambiguated record
Ryan Pearce
Also filed as: PEARCE RYAN · PEARCE RYAN W
4 granted patents·10 pending applications·0 citations·filing 2017–2025
55Inventor score
Top patents by PatentIndex Score
14 records- 0172US12230714B2Self-aligned gate endcap (SAGE) architectures with vertical sidewallsINTEL CORP·Filed 2024·Granted Feb 18, 2025·0 cites·28 claims
- 0263US2025123288A1Methods for the simultaneous detection and quantification of insulin, proinsulin, proinsulin metabolic intermediates, c-peptide, and c-peptide variants by mass spectrometryQUEST DIAGNOSTICS INVEST LLC·Filed 2024·Application pending·0 cites
- 0363US2025393189A1Capacitors with amorphous oxide layer for high capacitance and low leakageINTEL CORP·Filed 2024·Application pending·0 cites
- 0463US2025151318A1Self-aligned gate endcap (sage) architectures with vertical sidewallsINTEL CORP·Filed 2025·Application pending·0 cites
- 0558US12224349B2Self-aligned gate endcap (SAGE) architectures with vertical sidewallsINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·20 claims
- 0658US2025374619A1Gated subfin reduction techniques in nanoribbon-based transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 0757US2025210411A1Interconnect layers with air gapsINTEL CORP·Filed 2023·Application pending·0 cites
- 0855US2025220990A1Gate cut plug with thin hermetic liner and low-k fill for reduced capacitance and oxidationINTEL CORP·Filed 2023·Application pending·0 cites
- 0951US2025113600A1Metal gate cut with reduced oxidation and parasitic capacitanceINTEL CORP·Filed 2023·Application pending·0 cites
- 1050US2025159932A1Integrated circuit structures having metal gate cut plug structuresINTEL CORP·Filed 2023·Application pending·0 cites
- 1148US12087614B2Gap fill dielectrics for electrical isolation of transistor structures in the manufacture of integrated circuitsINTEL CORP·Filed 2020·Granted Sep 10, 2024·0 cites·10 claims
- 1246US2023057326A1Self-aligned gate cut structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 1342US10643946B2Nitrogen assisted oxide gapfillINTEL CORP·Filed 2018·Granted May 5, 2020·0 cites·20 claims
- 1433US2020211833A1Seam-free silicon nitride gap-fill techniques for high aspect ratio trenchesINTEL CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →