Inventor · disambiguated record
Ryan Wuthrich
Also filed as: WUTHRICH RYAN W · WUTHRICH RYAN WAYNE
20 granted patents·2 pending applications·436 citations·filing 1996–2006
96Inventor score
Top patents by PatentIndex Score
22 records- 0195US6900519B2Diffused extrinsic base and method for fabricationIBM·Filed 2004·Granted May 31, 2005·95 cites·17 claims
- 0292US6875279B2Single reactor, multi-pressure chemical vapor deposition for semiconductor devicesIBM·Filed 2001·Granted Apr 5, 2005·44 cites·14 claims
- 0392US6774000B2Method of manufacture of MOSFET device with in-situ doped, raised source and drain structuresIBM·Filed 2002·Granted Aug 10, 2004·56 cites·17 claims
- 0489US6858532B2Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related toolingIBM·Filed 2002·Granted Feb 22, 2005·44 cites·19 claims
- 0586US6426265B1Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2001·Granted Jul 30, 2002·25 cites·23 claims
- 0683US6858903B2MOSFET device with in-situ doped, raised source and drain structuresIBM·Filed 2004·Granted Feb 22, 2005·24 cites·21 claims
- 0783US5874162AWeighted sintering process and conformable load tileIBM·Filed 1996·Granted Feb 23, 1999·69 cites·11 claims
- 0877US6744079B2Optimized blocking impurity placement for SiGe HBTsIBM·Filed 2002·Granted Jun 1, 2004·19 cites·12 claims
- 0971US6354309B1Process for treating a semiconductor substrateIBM·Filed 2000·Granted Mar 12, 2002·13 cites·14 claims
- 1066US7713829B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2006·Granted May 11, 2010·1 cites·14 claims
- 1165US7413967B2Yield improvement in silicon-germanium epitaxial growthIBM·Filed 2006·Granted Aug 19, 2008·2 cites·27 claims
- 1263US5741131AStacking system for substratesIBM·Filed 1996·Granted Apr 21, 1998·11 cites·8 claims
- 1361US6780735B2Method to increase carbon and boron doping concentrations in Si and SiGe filmsIBM·Filed 2001·Granted Aug 24, 2004·7 cites·9 claims
- 1460US6815802B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2002·Granted Nov 9, 2004·5 cites·5 claims
- 1556US2005145172A1Single reactor, multi-pressure chemical vapor deposition for semiconductor devicesIBM CORP BURLINGTON·Filed 2005·Application pending·0 cites
- 1654US6869854B2Diffused extrinsic base and method for fabricationIBM·Filed 2002·Granted Mar 22, 2005·5 cites·29 claims
- 1751US6881259B1In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon filmsIBM·Filed 2000·Granted Apr 19, 2005·1 cites·18 claims
- 1848US7118995B2Yield improvement in silicon-germanium epitaxial growthIBM·Filed 2004·Granted Oct 10, 2006·2 cites·5 claims
- 1946US7173274B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2004·Granted Feb 6, 2007·0 cites·10 claims
- 2040US6173720B1Process for treating a semiconductor substrateIBM·Filed 1998·Granted Jan 16, 2001·7 cites·19 claims
- 2139US2004140481A1Optimized blocking impurity placement for SiGe HBTsFiled 2004·Application pending·0 cites
- 2232US5948193AProcess for fabricating a multilayer ceramic substrate from thin greensheetIBM·Filed 1997·Granted Sep 7, 1999·6 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →