Inventor · disambiguated record
Sangki Hong
Also filed as: HONG SANGKI
13 granted patents·3 pending applications·1,339 citations·filing 2000–2011
95Inventor score
Top patents by PatentIndex Score
16 records- 0199US6284657B1Non-metallic barrier formation for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Sep 4, 2001·190 cites·20 claims
- 0298US6376353B1Aluminum and copper bimetallic bond pad scheme for copper damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 23, 2002·319 cites·52 claims
- 0397US8183127B2Method for bonding wafers to produce stacked integrated circuitsPATTI ROBERT·Filed 2010·Granted May 22, 2012·236 cites·12 claims
- 0497US7750488B2Method for bonding wafers to produce stacked integrated circuitsTEZZARON SEMICONDUCTOR INC·Filed 2006·Granted Jul 6, 2010·222 cites·17 claims
- 0596US6352917B1Reversed damascene process for multiple level metal interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·140 cites·34 claims
- 0692US6372636B1Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damasceneCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 16, 2002·70 cites·36 claims
- 0791US7898095B2Fiducial scheme adapted for stacked integrated circuitsTEZZARON SEMICONDUCTOR INC·Filed 2006·Granted Mar 1, 2011·27 cites·6 claims
- 0888US6489233B2Non-metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Dec 3, 2002·36 cites·16 claims
- 0987US6566260B2Non-metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted May 20, 2003·32 cites·19 claims
- 1083US6429122B2Non metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Aug 6, 2002·25 cites·26 claims
- 1180US8222121B2Fiducial scheme adapted for stacked integrated circuitsPATTI ROBERT·Filed 2011·Granted Jul 17, 2012·6 cites·6 claims
- 1279US6531390B2Non-metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Mar 11, 2003·19 cites·25 claims
- 1374US6225202B1Selective etching of unreacted nickel after salicidationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted May 1, 2001·17 cites·29 claims
- 1445US2005224921A1Method for bonding wafers to produce stacked integrated circuitsGUPTA SUBHASH·Filed 2005·Application pending·0 cites
- 1538US2002163072A1Method for bonding wafers to produce stacked integrated circuitsFiled 2001·Application pending·0 cites
- 1636US2002155693A1Method to form self-aligned anti-via interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →