Inventor · disambiguated record
Sang-Bum Kang
Also filed as: KANG SANG-BUM
7 granted patents·7 pending applications·375 citations·filing 1999–2007
87Inventor score
Top patents by PatentIndex Score
14 records- 0196US6372598B2Method of forming selective metal layer and method of forming capacitor and filling contact hole using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 16, 2002·283 cites·32 claims
- 0289US6787460B2Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formedSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 7, 2004·44 cites·24 claims
- 0382US7223689B2Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·14 claims
- 0474US7051934B2Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recessesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·15 cites·28 claims
- 0569US7067420B2Methods for forming a metal layer on a semiconductorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 27, 2006·12 cites·27 claims
- 0667US6821572B2Method of cleaning a chemical vapor deposition chamberSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 23, 2004·10 cites·20 claims
- 0754US6806135B2Method of manufacturing a semiconductor device using a two-step deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 19, 2004·5 cites·17 claims
- 0853US2007197015A1Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 0943US2007269974A1Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerPARK HEE-SOOK·Filed 2007·Application pending·0 cites
- 1043US2004224506A1Methods of forming metal layers using metallic precursorsFiled 2004·Application pending·0 cites
- 1142US2004043601A1Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerFiled 2003·Application pending·0 cites
- 1240US2003017697A1Methods of forming metal layers using metallic precursorsFiled 2002·Application pending·0 cites
- 1337US2003219942A1Methods of forming capacitors and integrated circuit devices including tantalum nitrideFiled 2003·Application pending·0 cites
- 1433US2004038517A1Methods of forming cobalt silicide contact structures including sidewall spacers for electrical isolation and contact structures formed therebyFiled 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Sang-Bum Kang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →