Inventor · disambiguated record
Sang-Beom Kang
Also filed as: KANG SANG-BEOM
67 granted patents·5 pending applications·1,053 citations·filing 2005–2019
99Inventor score
Top patents by PatentIndex Score
72 records- 0198US7589367B2Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 15, 2009·70 cites·16 claims
- 0298US7570511B2Semiconductor memory device having a three-dimensional cell array structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·80 cites·16 claims
- 0398US7542356B2Semiconductor memory device and method for reducing cell activation during write operationsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·76 cites·18 claims
- 0498US7190607B2Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurementSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 13, 2007·78 cites·32 claims
- 0597US9147500B2Semiconductor memory device having resistive memory cells and method of testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 29, 2015·39 cites·30 claims
- 0697US8611121B2Stacked memory devicesAHN SEUNG-EON·Filed 2010·Granted Dec 17, 2013·45 cites·28 claims
- 0796US10446207B2Spin transfer torque magnetic random access memory for supporting operational modes with mode registerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 15, 2019·36 cites·19 claims
- 0896US8780617B2Semiconductor memory device and method of performing burn-in test on the sameKANG SANG-BEOM·Filed 2012·Granted Jul 15, 2014·50 cites·16 claims
- 0996US7349245B2Non-volatile phase-change memory device and associated program-suspend-read operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·55 cites·42 claims
- 1095US8654595B2Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parametersKIM CHAN-KYUNG·Filed 2012·Granted Feb 18, 2014·24 cites·20 claims
- 1194US7903448B2Resistance random access memory having common source lineSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·31 cites·9 claims
- 1294US7522449B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·35 cites·20 claims
- 1393US7920405B2Circuits and methods for adaptive write bias driving of resistive non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 5, 2011·34 cites·28 claims
- 1493US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 1592US8355291B2Resistive memory device and method of controlling refresh operation of resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·15 cites·20 claims
- 1692US7894236B2Nonvolatile memory devices that utilize read/write merge circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 22, 2011·24 cites·10 claims
- 1790US10204670B2Spin transfer torque magnetic random access memory for supporting operational modes with mode registerSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 12, 2019·13 cites·18 claims
- 1890US8677216B2Stacked semiconductor memory device and related error-correction methodPARK CHUL-WOO·Filed 2011·Granted Mar 18, 2014·14 cites·19 claims
- 1989US9183910B2Semiconductor memory devices for alternately selecting bit linesLEE YUN-SANG·Filed 2013·Granted Nov 10, 2015·18 cites·18 claims
- 2089US8223529B2Resistive memory devices, memory systems and methods of controlling input and output operations of the sameKIM HO-JUNG·Filed 2010·Granted Jul 17, 2012·13 cites·14 claims
- 2189US7457151B2Phase change random access memory (PRAM) device having variable drive voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 25, 2008·21 cites·23 claims
- 2288US7515459B2Method of programming a memory cell array using successive pulses of increased durationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 7, 2009·19 cites·8 claims
- 2388US7436693B2Phase-change semiconductor memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 14, 2008·20 cites·6 claims
- 2488US7262990B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 28, 2007·17 cites·14 claims
- 2586US9042152B2Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory deviceKIM CHAN-KYUNG·Filed 2012·Granted May 26, 2015·10 cites·20 claims
- 2683US8271856B2Resistive memory devices and methods of controlling operations of the sameKANG SANG-BEOM·Filed 2010·Granted Sep 18, 2012·9 cites·18 claims
- 2782US8054665B2Stacked memory device including a pre-decoder/pre-driver sandwiched between a plurality of inter-decoders/inter-driversSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·9 cites·20 claims
- 2882US7924639B2Nonvolatile memory device using resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·13 cites·20 claims
- 2980US7869256B2Bi-directional resistive random access memory capable of multi-decoding and method of writing data theretoSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·7 cites·11 claims
- 3079US8031517B2Memory device, memory system having the same, and programming method of a memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 4, 2011·10 cites·25 claims
- 3179US7843715B2Memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·11 cites·17 claims
- 3279US7843716B2Nonvolatile memory device having memory and reference cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·11 cites·19 claims
- 3379US7471553B2Phase change memory device and program method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 30, 2008·10 cites·11 claims
- 3478US7586776B2Nonvolatile memory devices having multi-filament variable resistivity memory cells thereinSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·10 cites·24 claims
- 3578US7317655B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 8, 2008·5 cites·23 claims
- 3677US7280391B2Phase change memory device for use in a burst read operation and a data reading method thereofSAMSUNG ELECTRONICS CO LLC·Filed 2005·Granted Oct 9, 2007·11 cites·17 claims
- 3773US8369173B2Semiconductor devices and methods for changing operating characteristics and semiconductor systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 5, 2013·3 cites·16 claims
- 3873US7993961B2Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·3 cites·7 claims
- 3970US8374052B2Information storage devices using magnetic domain wall movement and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 12, 2013·4 cites·26 claims
- 4070US8050074B2Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 1, 2011·4 cites·21 claims
- 4168US7808811B2Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·5 cites·13 claims
- 4268US7701747B2Non-volatile memory including sub cell array and method of writing data theretoSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·6 cites·17 claims
- 4366US8345464B2Resistive memory devices having a stacked structure and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 1, 2013·3 cites·17 claims
- 4466US8136017B2Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC methodOH HYUNG-ROK·Filed 2008·Granted Mar 13, 2012·6 cites·10 claims
- 4566US7710767B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·6 cites·19 claims
- 4665US8406029B2Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devicesKIM HO-JUNG·Filed 2010·Granted Mar 26, 2013·3 cites·19 claims
- 4765US8279667B2Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movementKIM HO JUNG·Filed 2010·Granted Oct 2, 2012·3 cites·9 claims
- 4865US7391669B2Semiconductor memory device and core layout thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 24, 2008·2 cites·29 claims
- 4964US7859882B2Resistive memory device and method of writing dataSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 28, 2010·5 cites·10 claims
- 5064US7436711B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 14, 2008·4 cites·10 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →