Inventor · disambiguated record
Saori Kashiwada
Also filed as: KASHIWADA SAORI
17 granted patents·8 pending applications·286 citations·filing 2010–2024
94Inventor score
Top patents by PatentIndex Score
25 records- 0198US9299918B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Mar 29, 2016·29 cites·11 claims
- 0297US9117924B2Magnetic memory element and method of manufacturing the sameKITAGAWA EIJI·Filed 2012·Granted Aug 25, 2015·42 cites·11 claims
- 0397US9117995B2Magnetoresistance element and magnetic memoryTOSHIBA KK·Filed 2013·Granted Aug 25, 2015·39 cites·18 claims
- 0497US8878317B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Nov 4, 2014·29 cites·11 claims
- 0597US8576616B2Magnetic element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Nov 5, 2013·43 cites·20 claims
- 0697US8488375B2Magnetic recording element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Jul 16, 2013·37 cites·20 claims
- 0796US8508979B2Magnetic recording element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Aug 13, 2013·30 cites·20 claims
- 0895US8710605B2Magnetic memory and method of manufacturing the sameTAKAHASHI SHIGEKI·Filed 2011·Granted Apr 29, 2014·21 cites·13 claims
- 0976US10340311B2Magnetoresistive effect element with magnetic layers and magnetic memoryTOSHIBA MEMORY CORP·Filed 2017·Granted Jul 2, 2019·2 cites·10 claims
- 1073US8419412B2Nano-imprint mold and substrate with uneven patterns manufactured by using the moldOHSAWA YUICHI·Filed 2012·Granted Apr 16, 2013·2 cites·6 claims
- 1172US9166065B2Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing methodOHSAWA YUICHI·Filed 2012·Granted Oct 20, 2015·3 cites·13 claims
- 1269US8420499B2Concave-convex pattern forming method and magnetic tunnel junction element forming methodARIGA TOMOTAKA·Filed 2011·Granted Apr 16, 2013·3 cites·7 claims
- 1368US9799482B2Device manufacturing apparatus and manufacturing method of magnetic device using structure to pass ion beamTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 24, 2017·1 cites·20 claims
- 1468US9224944B2Magnetic memory and method of manufacturing the sameTOSHIBA KK·Filed 2014·Granted Dec 29, 2015·1 cites·5 claims
- 1568US8080478B2Method of producing maskOHSAWA YUICHI·Filed 2010·Granted Dec 20, 2011·2 cites·9 claims
- 1665US10103198B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2016·Granted Oct 16, 2018·2 cites·16 claims
- 1761US2024298444A1Semiconductor device and method of manufacturing semiconductor deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 1856US2014087483A1Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect elementTOSHIBA KK·Filed 2013·Application pending·0 cites
- 1956US2023292505A1Semiconductor device and method for manufacturing semiconductor deviceKIOXIA CORP·Filed 2022·Application pending·0 cites
- 2053US2016380189A1Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect elementTOSHIBA KK·Filed 2016·Application pending·0 cites
- 2150US2013248355A1Method of manufacturing magnetoresistive elementTOSHIBA KK·Filed 2012·Application pending·0 cites
- 2249US2016359107A1Method of manufacturing magnetoresistive elementTOSHIBA KK·Filed 2016·Application pending·0 cites
- 2343US2019280186A1Magnetic memoryTOSHIBA MEMORY CORP·Filed 2018·Application pending·0 cites
- 2436US8431210B2Master for producing stamperKASHIWADA SAORI·Filed 2012·Granted Apr 30, 2013·0 cites·10 claims
- 2533US2016197268A1Magnetoresistive effect element, manufacturing method of magnetoresistive effect element, and magnetic memoryTOSHIBA KK·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →