Inventor · disambiguated record
Sarah Kim
Also filed as: KIM SARAH · KIM SARAH E · KIM SARAH EUNKYUNG
49 granted patents·23 pending applications·5,040 citations·filing 2001–2023
99Inventor score
Top patents by PatentIndex Score
72 records- 0199US7410884B23D integrated circuits using thick metal for backside connections and offset bumpsINTEL CORP·Filed 2005·Granted Aug 12, 2008·278 cites·25 claims
- 0299US7157787B2Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devicesINTEL CORP·Filed 2004·Granted Jan 2, 2007·867 cites·29 claims
- 0399US7037804B2Wafer bonding using a flexible bladder press for three dimensional (3D) vertical stack integrationINTEL CORP·Filed 2003·Granted May 2, 2006·258 cites·7 claims
- 0499US6887769B2Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the sameINTEL CORP·Filed 2002·Granted May 3, 2005·516 cites·5 claims
- 0599US6762076B2Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devicesINTEL CORP·Filed 2002·Granted Jul 13, 2004·579 cites·9 claims
- 0699US6661085B2Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stackINTEL CORP·Filed 2002·Granted Dec 9, 2003·536 cites·14 claims
- 0798US7615462B2Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stackINTEL CORP·Filed 2006·Granted Nov 10, 2009·154 cites·20 claims
- 0898US7056813B2Methods of forming backside connections on a wafer stackINTEL CORP·Filed 2005·Granted Jun 6, 2006·77 cites·51 claims
- 0998US7056807B2Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stackINTEL CORP·Filed 2003·Granted Jun 6, 2006·245 cites·19 claims
- 1098US6975016B2Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereofINTEL CORP·Filed 2002·Granted Dec 13, 2005·252 cites·13 claims
- 1198US6908565B2Etch thinning techniques for wafer-to-wafer vertical stacksINTEL CORP·Filed 2002·Granted Jun 21, 2005·251 cites·19 claims
- 1297US6943440B2Methods of processing thick ILD layers using spray coating or lamination for C4 wafer level thick metal integrated flowINTEL CORP·Filed 2003·Granted Sep 13, 2005·151 cites·14 claims
- 1397US6790748B2Thinning techniques for wafer-to-wafer vertical stacksINTEL CORP·Filed 2002·Granted Sep 14, 2004·242 cites·22 claims
- 1496US6897125B2Methods of forming backside connections on a wafer stackINTEL CORP·Filed 2003·Granted May 24, 2005·95 cites·17 claims
- 1593US8421225B2Three-dimensional stacked substrate arrangementsRAMANATHAN SHRIRAM·Filed 2012·Granted Apr 16, 2013·14 cites·8 claims
- 1692US7696015B2Method of forming a stack of heat generating integrated circuit chips with intervening cooling integrated circuit chipsINTEL CORP·Filed 2006·Granted Apr 13, 2010·15 cites·9 claims
- 1792US6977435B2Thick metal layer integrated process flow to improve power delivery and mechanical bufferingINTEL CORP·Filed 2003·Granted Dec 20, 2005·82 cites·28 claims
- 1892US6645832B2Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stackINTEL CORP·Filed 2002·Granted Nov 11, 2003·67 cites·20 claims
- 1991US7148565B2Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stackINTEL CORP·Filed 2003·Granted Dec 12, 2006·61 cites·20 claims
- 2089US7265406B2Capacitor with conducting nanostructureINTEL CORP·Filed 2005·Granted Sep 4, 2007·12 cites·18 claims
- 2189US7183648B2Method and apparatus for low temperature copper to copper bondingINTEL CORP·Filed 2004·Granted Feb 27, 2007·43 cites·5 claims
- 2288US7091084B2Ultra-high capacitance device based on nanostructuresINTEL CORP·Filed 2005·Granted Aug 15, 2006·11 cites·6 claims
- 2388US6911373B2Ultra-high capacitance device based on nanostructuresINTEL CORP·Filed 2002·Granted Jun 28, 2005·32 cites·5 claims
- 2487US7973407B2Three-dimensional stacked substrate arrangementsINTEL CORP·Filed 2008·Granted Jul 5, 2011·12 cites·12 claims
- 2581US6870270B2Method and structure for interfacing electronic devicesINTEL CORP·Filed 2002·Granted Mar 22, 2005·25 cites·26 claims
- 2680US8203208B2Three-dimensional stacked substrate arrangementsRAMANATHAN SHRIRAM·Filed 2011·Granted Jun 19, 2012·4 cites·7 claims
- 2780US6599808B2Method and device for on-chip decoupling capacitor using nanostructures as bottom electrodeINTEL CORP·Filed 2001·Granted Jul 29, 2003·24 cites·21 claims
- 2877US7842553B2Cooling micro-channelsINTEL CORP·Filed 2007·Granted Nov 30, 2010·6 cites·5 claims
- 2975US7105382B2Self-aligned electrodes contained within the trenches of an electroosmotic pumpINTEL CORP·Filed 2003·Granted Sep 12, 2006·20 cites·16 claims
- 3074US7227257B2Cooling micro-channelsINTEL CORP·Filed 2002·Granted Jun 5, 2007·17 cites·3 claims
- 3174US7105925B2Differential planarizationINTEL CORP·Filed 2005·Granted Sep 12, 2006·6 cites·9 claims
- 3274US6992381B2Using external radiators with electroosmotic pumps for cooling integrated circuitsINTEL CORP·Filed 2003·Granted Jan 31, 2006·16 cites·18 claims
- 3374US6981849B2Electro-osmotic pumps and micro-channelsINTEL CORP·Filed 2002·Granted Jan 3, 2006·20 cites·16 claims
- 3472US10327285B2Heating element and method for manufacturing sameLG CHEMICAL LTD·Filed 2014·Granted Jun 18, 2019·2 cites·16 claims
- 3572US7537954B2Microelectronic assembly having thermoelectric elements to cool a die and a method of making the sameINTEL CORP·Filed 2005·Granted May 26, 2009·4 cites·12 claims
- 3669US7034394B2Microelectronic assembly having thermoelectric elements to cool a die and a method of making the sameINTEL CORP·Filed 2003·Granted Apr 25, 2006·12 cites·27 claims
- 3768US2025006885A1Method for manufacturing electrode assembly, electrode assembly, and lithium secondary battery comprising sameLG ENERGY SOLUTION LTD·Filed 2023·Application pending·0 cites
- 3867US7084495B2Electroosmotic pumps using porous frits for cooling integrated circuit stacksINTEL CORP·Filed 2003·Granted Aug 1, 2006·7 cites·24 claims
- 3967US2024355999A1Method for manufacturing anode for lithium secondary battery, anode for lithium secondary battery, and lithium secondary battery comprising anodeLG ENERGY SOLUTION LTD·Filed 2023·Application pending·0 cites
- 4067US2025006884A1Pre-lithiation method for lithium secondary battery anode, anode intermediate, and lithium secondary battery comprising anodeLG ENERGY SOLUTION LTD·Filed 2023·Application pending·0 cites
- 4167US2024332494A1Method for prelithiating electrode for lithium secondary battery, electrode intermediate, and lithium secondary battery including electrodeLG ENERGY SOLUTION LTD·Filed 2023·Application pending·0 cites
- 4267US2024266494A1Transfer laminate, method for manufacturing anode for lithium secondary battery, anode for lithium secondary battery, and lithium secondary battery comprising anodeLG ENERGY SOLUTION LTD·Filed 2023·Application pending·0 cites
- 4366US2024258512A1Anode for lithium secondary battery, method for manufacturing lithium secondary battery, and lithium secondary batteryLG ENERGY SOLUTION LTD·Filed 2022·Application pending·0 cites
- 4466US2024213448A1Pre-lithiation method of negative electrode for lithium secondary battery, negative electrode for lithium secondary battery, and lithium secondary battery comprising negative electrodeLG ENERGY SOLUTION LTD·Filed 2022·Application pending·0 cites
- 4565US7348217B2Method and structure for interfacing electronic devicesINTEL CORP·Filed 2006·Granted Mar 25, 2008·2 cites·4 claims
- 4665US2025087666A1Anode for lithium secondary battery, manufacturing method for anode for lithium secondary battery, and lithium secondary battery including anodeLG ENERGY SOLUTION LTD·Filed 2022·Application pending·0 cites
- 4764US7271434B2Capacitor with insulating nanostructureINTEL CORP·Filed 2003·Granted Sep 18, 2007·7 cites·4 claims
- 4863US7244983B2Method and device for on-chip decoupling capacitor using nanostructures as bottom electrodeINTEL CORP·Filed 2003·Granted Jul 17, 2007·9 cites·14 claims
- 4962US2024336050A1Transfer laminate, method for pre-lithiation of electrode for lithium secondary battery, and lithium secondary battery comprising electrodeLG ENERGY SOLUTION LTD·Filed 2023·Application pending·0 cites
- 5060US12449375B2Inspection method, substrate processing method including the same, and substrate processing device using the substrate processing methodSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →