Inventor · disambiguated record
Sang-Su Kim
Also filed as: KIM SANG-SU
78 granted patents·15 pending applications·1,228 citations·filing 1996–2023
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD63SAMSUNG DISPLAY CO LTD5KIM SANG-SU4HYUNDAI MOTOR CO LTD2KOREA ADVANCED INST SCI & TECH2
Top patents by PatentIndex Score
93 records- 0199US7642140B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·135 cites·10 claims
- 0297US9412816B2Semiconductor device including multiple nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 9, 2016·25 cites·15 claims
- 0397US6633066B1CMOS integrated circuit devices and substrates having unstrained silicon active layersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 14, 2003·124 cites·12 claims
- 0496US9978835B2Semiconductor device including nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·15 cites·16 claims
- 0596US9324812B2Semiconductor device including nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·24 cites·19 claims
- 0696US9219064B2Semiconductor devices having a nanowire channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 22, 2015·23 cites·18 claims
- 0796US7183172B2Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 27, 2007·95 cites·6 claims
- 0894US7195987B2Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·26 cites·17 claims
- 0994US6815764B2Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·71 cites·13 claims
- 1093US9431537B2Semiconductor devices and methods of fabricating the sameMAEDA SHIGENOBU·Filed 2015·Granted Aug 30, 2016·8 cites·20 claims
- 1191US10566331B1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 18, 2020·7 cites·20 claims
- 1291US6670677B2SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereonSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·45 cites·15 claims
- 1389US9627273B2Methods of manufacturing semiconductor devices having a nanowire channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 18, 2017·5 cites·19 claims
- 1489US6806517B2Flash memory having local SONOS structure using notched gate and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·47 cites·20 claims
- 1589US5696868AApparatus and method for recording/playing back broadcasting signalGOLD STAR CO·Filed 1996·Granted Dec 9, 1997·74 cites·21 claims
- 1688US10074717B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 11, 2018·4 cites·20 claims
- 1787US8962360B2Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the organic layer deposition apparatusSAMSUNG DISPLAY CO LTD·Filed 2013·Granted Feb 24, 2015·4 cites·8 claims
- 1887US6518645B2SOI-type semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 11, 2003·44 cites·16 claims
- 1986US7250655B2MOS transistor having a T-shaped gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 31, 2007·38 cites·17 claims
- 2085US9646891B2Metal-oxide semiconductor field effect transistor, method of fabricating the same, and semiconductor apparatus including the sameYANG JUNG-GIL·Filed 2015·Granted May 9, 2017·7 cites·21 claims
- 2185US6605847B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 12, 2003·32 cites·10 claims
- 2283US10622444B2FinFET semiconductor device with a dummy gate, first gate spacer and second gate spacerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 14, 2020·2 cites·20 claims
- 2383US6693013B2Semiconductor transistor using L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·29 cites·21 claims
- 2482US9984925B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·4 cites·12 claims
- 2582US7446371B2Non-volatile memory cell structure with charge trapping layers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·9 cites·28 claims
- 2682US7184316B2Non-volatile memory cell array having common drain lines and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·11 cites·32 claims
- 2782US6667525B2Semiconductor device having hetero grain stack gateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 23, 2003·24 cites·12 claims
- 2882US6524902B2Method of manufacturing CMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 25, 2003·26 cites·11 claims
- 2981US9576955B2Semiconductor device having strained channel layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 21, 2017·4 cites·15 claims
- 3081US9515147B2Semiconductor device including nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 6, 2016·2 cites·5 claims
- 3180US12507448B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·18 claims
- 3280US8772095B2Method of manufacturing semiconductor device using stress memorization techniqueKIM SEOK-HOON·Filed 2012·Granted Jul 8, 2014·5 cites·23 claims
- 3380US6914301B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·20 cites·19 claims
- 3480US6881650B2Method for forming SOI substrateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 19, 2005·29 cites·19 claims
- 3580US6881621B2Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·19 cites·24 claims
- 3680US6815320B2Method for fabricating semiconductor device including gate spacerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·24 cites·27 claims
- 3779US9048460B2Deposition apparatus and method for manufacturing organic light emitting display apparatus by using the sameSAMSUNG DISPLAY CO LTD·Filed 2013·Granted Jun 2, 2015·2 cites·15 claims
- 3879US6716689B2MOS transistor having a T-shaped gate electrode and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·20 cites·19 claims
- 3978US10896955B2Semiconductor device including a functional layer and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·2 cites·17 claims
- 4078US9101826B2Display device for a slot machineLEE KYOUNG CHAN·Filed 2011·Granted Aug 11, 2015·3 cites·6 claims
- 4178US6696328B2CMOS gate electrode using selective growth and a fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 24, 2004·24 cites·38 claims
- 4275US7320920B2Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·5 cites·21 claims
- 4374US7179709B2Method of fabricating non-volatile memory device having local SONOS gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 20, 2007·13 cites·28 claims
- 4474US6794306B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·16 cites·7 claims
- 4572US7045850B2Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 16, 2006·14 cites·5 claims
- 4670US11515390B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 4769US10165415B2Method and apparatus for geomagnetic signal processingSAMSUNG SDS CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·16 claims
- 4869US9425198B2Semiconductor device having strain-relaxed buffer layer and method of manufacturing the sameLEE DONG-KYU·Filed 2014·Granted Aug 23, 2016·2 cites·17 claims
- 4968US10137533B2Multi-functional apparatus for testing and etching substrate and substrate processing apparatus including the sameSAMSUNG DISPLAY CO LTD·Filed 2016·Granted Nov 27, 2018·1 cites·20 claims
- 5068US9236435B2Tunneling field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·2 cites·18 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →