Inventor · disambiguated record
Sang Ki Ko
Also filed as: KO SANG KI
22 granted patents·3 pending applications·26 citations·filing 2018–2023
91Inventor score
Top patents by PatentIndex Score
25 records- 0197US10822720B1Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the sameSKC CO LTD·Filed 2020·Granted Nov 3, 2020·6 cites·7 claims
- 0292US11741755B2Method and apparatus for recognizing sign language or gesture using 3D EDMKOREA ELECTRONICS TECHNOLOGY·Filed 2020·Granted Aug 29, 2023·9 cites·14 claims
- 0392US11078599B2Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatusSKC CO LTD·Filed 2019·Granted Aug 3, 2021·3 cites·17 claims
- 0490US11359306B2Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or moreSENIC INC·Filed 2020·Granted Jun 14, 2022·2 cites·3 claims
- 0586US11225730B2Method for producing ingot, raw material for ingot growth, and method for preparing the raw materialSENIC INC·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 0680US11859305B2Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystalSENIC INC·Filed 2023·Granted Jan 2, 2024·0 cites·9 claims
- 0780US11708644B2Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefromSENIC INC·Filed 2020·Granted Jul 25, 2023·1 cites·7 claims
- 0877US11846038B2Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based materialSENIC INC·Filed 2019·Granted Dec 19, 2023·0 cites·8 claims
- 0974US11482134B2Method, apparatus, and terminal for providing sign language video reflecting appearance of conversation partnerKOREA ELECTRONICS TECHNOLOGY·Filed 2019·Granted Oct 25, 2022·3 cites·14 claims
- 1071US11339497B2Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured therebySENIC INC·Filed 2021·Granted May 24, 2022·0 cites·5 claims
- 1170US2024076799A1Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured therebySENIC INC·Filed 2023·Application pending·0 cites
- 1269US11566344B2Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a waferSENIC INC·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 1365US10846568B2Deep learning-based automatic gesture recognition method and systemKOREA ELECTRONICS TECHNOLOGY·Filed 2018·Granted Nov 24, 2020·1 cites·20 claims
- 1464US11289576B2Wafer and method of manufactruring waferSENIC INC·Filed 2021·Granted Mar 29, 2022·0 cites·12 claims
- 1563US11474012B2Method for preparing silicon carbide wafer and silicon carbide waferSENIC INC·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 1662US11466383B2Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide waferSENIC INC·Filed 2020·Granted Oct 11, 2022·0 cites·4 claims
- 1760US2023081168A1Method for providing exercise load informationFITOGETHER INC·Filed 2022·Application pending·0 cites
- 1859US11939698B2Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured therebySENIC INC·Filed 2020·Granted Mar 26, 2024·0 cites·6 claims
- 1959US11856678B2Method of measuring a graphite article, apparatus for a measurement, and ingot growing systemSENIC INC·Filed 2020·Granted Dec 26, 2023·0 cites·19 claims
- 2059US11268209B2Seed crystal including protective film including a first layer with first filler and second layer with second fillerSENIC INC·Filed 2019·Granted Mar 8, 2022·0 cites·12 claims
- 2158US11646209B2Method of cleaning wafer and wafer with reduced impuritiesSENIC INC·Filed 2021·Granted May 9, 2023·0 cites·4 claims
- 2256US11795572B2Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystalSENIC INC·Filed 2021·Granted Oct 24, 2023·0 cites·4 claims
- 2354US11591711B2Method and system for producing silicon carbide ingotSENIC INC·Filed 2020·Granted Feb 28, 2023·0 cites·11 claims
- 2451US11447889B2Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a waferSENIC INC·Filed 2020·Granted Sep 20, 2022·0 cites·8 claims
- 2545US2021272793A1Wafer, epitaxial wafer, method for manufacturing a wafer and method for manufacturing an epitaxial waferSKC CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →