Inventor · disambiguated record
Satwinder Malhi
Also filed as: MALHI SATWINDER · MALHI SATWINDER D · MALHI SATWINDER D S
71 granted patents·4,711 citations·filing 1981–1997
99Inventor score
Top patents by PatentIndex Score
71 records- 0198US5640034ATop-drain trench based resurf DMOS transistor structureTEXAS INSTRUMENTS INC·Filed 1992·Granted Jun 17, 1997·209 cites·7 claims
- 0298US5326711AHigh performance high voltage vertical transistor and method of fabricationTEXAS INSTRUMENTS INC·Filed 1993·Granted Jul 5, 1994·283 cites·4 claims
- 0398US5088190AMethod of forming an apparatus for burn in testing of integrated circuit chipTEXAS INSTRUMENTS INC·Filed 1990·Granted Feb 18, 1992·216 cites·7 claims
- 0498US5070297AFull wafer integrated circuit testing deviceTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 3, 1991·499 cites·32 claims
- 0598US5006792AFlip-chip test socket adaptor and methodTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 9, 1991·206 cites·29 claims
- 0697US5539238AArea efficient high voltage Mosfets with vertical resurf drift regionsTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 23, 1996·240 cites·7 claims
- 0797US5073117AFlip-chip test socket adaptor and methodTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 17, 1991·203 cites·20 claims
- 0895US5304827APerformance lateral double-diffused MOS transistorTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 19, 1994·120 cites·11 claims
- 0994US5818165AFlexible fed displayTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 6, 1998·86 cites·14 claims
- 1094US5090118AHigh performance test head and method of makingTEXAS INSTRUMENTS INC·Filed 1990·Granted Feb 25, 1992·158 cites·3 claims
- 1193US5723891ATop-drain trench based resurf DMOS transistor structureTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 3, 1998·100 cites·4 claims
- 1293US5393999ASiC power MOSFET device structureTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 28, 1995·104 cites·13 claims
- 1392US5346835ATriple diffused lateral resurf insulated gate field effect transistor compatible with process and methodTEXAS INSTRUMENTS INC·Filed 1993·Granted Sep 13, 1994·97 cites·11 claims
- 1491US5712760ACompact foldable keyboardTEXAS INSTRUMENTS INC·Filed 1996·Granted Jan 27, 1998·216 cites·19 claims
- 1591US5286995AIsolated resurf LDMOS devices for multiple outputs on one dieTEXAS INSTRUMENTS INC·Filed 1992·Granted Feb 15, 1994·86 cites·4 claims
- 1691US5187020ACompliant contact padTEXAS INSTRUMENTS INC·Filed 1991·Granted Feb 16, 1993·164 cites·4 claims
- 1790US5306652ALateral double diffused insulated gate field effect transistor fabrication processTEXAS INSTRUMENTS INC·Filed 1991·Granted Apr 26, 1994·67 cites·27 claims
- 1890US4662061AMethod for fabricating a CMOS well structureTEXAS INSTRUMENTS INC·Filed 1985·Granted May 5, 1987·96 cites·2 claims
- 1988US5734180AHigh-performance high-voltage device structuresTEXAS INSTRUMENTS INC·Filed 1996·Granted Mar 31, 1998·76 cites·19 claims
- 2088US5569949AArea efficient high voltage MOSFETs with vertical RESURF drift regionsTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 29, 1996·73 cites·7 claims
- 2188US5406110AResurf lateral double diffused insulated gate field effect transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 11, 1995·58 cites·24 claims
- 2285US4621276ABuried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layerTEXAS INSTRUMENTS INC·Filed 1984·Granted Nov 4, 1986·55 cites·12 claims
- 2385US4502202AMethod for fabricating overlaid device in stacked CMOSTEXAS INSTRUMENTS INC·Filed 1983·Granted Mar 5, 1985·38 cites·5 claims
- 2484US4689871AMethod of forming vertically integrated current sourceTEXAS INSTRUMENTS INC·Filed 1985·Granted Sep 1, 1987·45 cites·11 claims
- 2583US4677735AMethod of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layerTEXAS INSTRUMENTS INC·Filed 1986·Granted Jul 7, 1987·62 cites·4 claims
- 2682US5767464AElectronic device low profile keyboard switch assembly with deployed and stored actuating mechanismTEXAS INSTRUMENTS INC·Filed 1996·Granted Jun 16, 1998·49 cites·10 claims
- 2782US5696010AMethod of forming a semiconductor device including a trenchTEXAS INSTRUMENTS INC·Filed 1996·Granted Dec 9, 1997·50 cites·10 claims
- 2882US4875086ASilicon-on-insulator integrated circuits and methodTEXAS INSTRUMENTS INC·Filed 1987·Granted Oct 17, 1989·56 cites·13 claims
- 2981US5059897AMethod and apparatus for testing passive substrates for integrated circuit mountingTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 22, 1991·41 cites·31 claims
- 3079US5812116ALow profile keyboardTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 22, 1998·86 cites·15 claims
- 3178US5406096ADevice and method for high performance high voltage operationTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 11, 1995·40 cites·12 claims
- 3276US5382536AMethod of fabricating lateral DMOS structureTEXAS INSTRUMENTS INC·Filed 1993·Granted Jan 17, 1995·39 cites·22 claims
- 3375US6194773B1Vertical transistor having top and bottom surface isolationTEXAS INSTRUMENTS INC·Filed 1995·Granted Feb 27, 2001·41 cites·3 claims
- 3474US5382535AMethod of fabricating performance lateral double-diffused MOS transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 17, 1995·31 cites·4 claims
- 3574US5338965AHigh voltage structures with oxide isolated source and RESURF drift region in bulk siliconTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 16, 1994·33 cites·15 claims
- 3673US5686755ALDMOS resurf high voltage transistorTEXAS INSTRUMENTS INC·Filed 1996·Granted Nov 11, 1997·28 cites·4 claims
- 3773US5441911ASilicon carbide wafer bonded to a silicon waferTEXAS INSTRUMENTS INC·Filed 1994·Granted Aug 15, 1995·43 cites·9 claims
- 3872US5512495AMethod of manufacturing extended drain resurf lateral DMOS devicesTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 30, 1996·34 cites·5 claims
- 3970US5182222AProcess for manufacturing a DMOS transistorTEXAS INSTRUMENTS INC·Filed 1991·Granted Jan 26, 1993·31 cites·11 claims
- 4069US5111260APolysilicon FETsTEXAX INSTR INC·Filed 1990·Granted May 5, 1992·31 cites·5 claims
- 4168US5350932AHigh voltage structures with oxide isolated source and resurf drift region in bulk siliconTEXAS INSTRUMENTS INC·Filed 1993·Granted Sep 27, 1994·26 cites·15 claims
- 4268US5349207ASilicon carbide wafer bonded to a silicon waferTEXAS INSTRUMENTS INC·Filed 1993·Granted Sep 20, 1994·34 cites·20 claims
- 4366US5801091AMethod for current ballasting and busing over active device area using a multi-level conductor processTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 1, 1998·29 cites·4 claims
- 4464US5933320AComputer having a collapsible keyboard structureTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 3, 1999·44 cites·12 claims
- 4564US5240865AMethod of forming a thyristor on an SOI substrateTEXAS INSTRUMENTS INC·Filed 1992·Granted Aug 31, 1993·23 cites·20 claims
- 4663US5294559AMethod of forming a vertical transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted Mar 15, 1994·29 cites·7 claims
- 4762US5554546AMethod of fabricating a high voltage transistorTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 10, 1996·18 cites·9 claims
- 4861US5510275AMethod of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor materialTEXAS INSTRUMENTS INC·Filed 1993·Granted Apr 23, 1996·20 cites·11 claims
- 4959US5202276AMethod of forming a low on-resistance DMOS vertical transistor structureTEXAS INSTRUMENTS INC·Filed 1991·Granted Apr 13, 1993·19 cites·4 claims
- 5059US4549193AField effect transistor device utilizing critical buried channel connecting source and drainUNIV TORONTO·Filed 1981·Granted Oct 22, 1985·15 cites·3 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →