Inventor · disambiguated record
Sadaaki Masuoka
Also filed as: MASUOKA SADAAKI
19 granted patents·2 pending applications·331 citations·filing 1996–2023
94Inventor score
Top patents by PatentIndex Score
21 records- 0195US12294005B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 6, 2025·1 cites·17 claims
- 0294US6551884B2Semiconductor device including gate insulation films having different thicknessesNEC ELECTRONICS CORP·Filed 2002·Granted Apr 22, 2003·97 cites·12 claims
- 0387US10833085B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 10, 2020·4 cites·20 claims
- 0484US6133082AMethod of fabricating CMOS semiconductor deviceNEC CORP·Filed 1999·Granted Oct 17, 2000·64 cites·16 claims
- 0583US6342413B1Method of manufacturing semiconductor deviceNEC CORP·Filed 2000·Granted Jan 29, 2002·25 cites·19 claims
- 0679US11862639B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·19 claims
- 0777US5994743ASemiconductor device having different sidewall widths and different source/drain depths for NMOS & PMOS structuresNEC CORP·Filed 1998·Granted Nov 30, 1999·41 cites·5 claims
- 0872US11437377B2Method of manufacturing semiconductor device having a plurality of channel layersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·7 claims
- 0968US6413811B1Method of forming a shared contact in a semiconductor device including MOSFETSNEC CORP·Filed 2000·Granted Jul 2, 2002·15 cites·4 claims
- 1068US6217357B1Method of manufacturing two-power supply voltage compatible CMOS semiconductor deviceNEC CORP·Filed 1999·Granted Apr 17, 2001·30 cites·10 claims
- 1162US5733792AMOS field effect transistor with improved pocket regions for suppressing any short channel effects and method for fabricating the sameNEC CORP·Filed 1996·Granted Mar 31, 1998·29 cites·9 claims
- 1257US7256462B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Aug 14, 2007·1 cites·9 claims
- 1355US5994179AMethod of fabricating a MOSFET featuring an effective suppression of reverse short-channel effectNEC CORP·Filed 1997·Granted Nov 30, 1999·21 cites·26 claims
- 1441US7498626B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Granted Mar 3, 2009·0 cites·20 claims
- 1541US7190009B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Mar 13, 2007·0 cites·5 claims
- 1640US6472714B1Semiconductor device in which memory cells and peripheral circuits are provided on the same circuitNEC CORP·Filed 2000·Granted Oct 29, 2002·3 cites·10 claims
- 1739US2002017640A1Method of manufacturing semiconductor deviceFiled 2001·Application pending·0 cites
- 1838US6798027B2Semiconductor device including gate insulation films having different thicknessesNEC ELECTRONICS CORP·Filed 2003·Granted Sep 28, 2004·0 cites·4 claims
- 1937US8753945B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jun 17, 2014·0 cites·16 claims
- 2033US2003205765A1Semiconductor device and method for manufacturing the sameNEC CORP·Filed 2001·Application pending·0 cites
- 2132US6627490B2Semiconductor device and method for fabricating the sameNEC ELECTRONICS CORP·Filed 2002·Granted Sep 30, 2003·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →