Inventor · disambiguated record
Saumitra Raj Mehrotra
Also filed as: MEHROTRA SAUMITRA RAJ
21 granted patents·5 pending applications·22 citations·filing 2017–2025
90Inventor score
Top patents by PatentIndex Score
26 records- 0189US10600911B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Mar 24, 2020·7 cites·12 claims
- 0289US10424646B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Sep 24, 2019·6 cites·13 claims
- 0386US10522677B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Dec 31, 2019·5 cites·14 claims
- 0481US11515416B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2020·Granted Nov 29, 2022·1 cites·11 claims
- 0571US11227921B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2019·Granted Jan 18, 2022·1 cites·18 claims
- 0670US11961907B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 0770US10418483B2Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layersNXP BV·Filed 2017·Granted Sep 17, 2019·1 cites·19 claims
- 0868US11777002B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 0968US10833174B2Transistor devices with extended drain regions located in trench sidewallsNXP USA INC·Filed 2018·Granted Nov 10, 2020·1 cites·20 claims
- 1059US2024128316A1Isolation structure for an active componentNXP BV·Filed 2023·Application pending·0 cites
- 1157US2025359096A1Zener diodeNXP BV·Filed 2025·Application pending·0 cites
- 1256US12501632B2Semiconductor device with improved mechanical stress resistanceNXP BV·Filed 2022·Granted Dec 16, 2025·0 cites·14 claims
- 1356US11640997B2Buried Zener designNXP BV·Filed 2021·Granted May 2, 2023·0 cites·6 claims
- 1456US2025046651A1Optimal high voltage tub design with floating poly trenchesNXP BV·Filed 2023·Application pending·0 cites
- 1552US11217675B2Trench with different transverse cross-sectional widthsNXP USA INC·Filed 2020·Granted Jan 4, 2022·0 cites·22 claims
- 1649US11387348B2Transistor formed with spacerNXP USA INC·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 1748US12057499B2Transistor devices with termination regionsNXP USA INC·Filed 2020·Granted Aug 6, 2024·0 cites·21 claims
- 1847US11075110B1Transistor trench with field plate structureNXP USA INC·Filed 2020·Granted Jul 27, 2021·0 cites·20 claims
- 1947US10607880B2Die with buried doped isolation regionNXP USA INC·Filed 2018·Granted Mar 31, 2020·0 cites·9 claims
- 2046US11329156B2Transistor with extended drain regionNXP USA INC·Filed 2019·Granted May 10, 2022·0 cites·11 claims
- 2145US10600879B2Transistor trench structure with field plate structuresNXP USA INC·Filed 2018·Granted Mar 24, 2020·0 cites·10 claims
- 2245US2022344506A1Semiconductor device and method of making a semiconductor deviceNXP USA INC·Filed 2021·Application pending·0 cites
- 2344US10672903B2Semiconductor device with drain active areaNXP USA INC·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 2443US10749023B2Vertical transistor with extended drain regionNXP USA INC·Filed 2018·Granted Aug 18, 2020·0 cites·13 claims
- 2541US10749028B2Transistor with gate/field plate structureNXP USA INC·Filed 2018·Granted Aug 18, 2020·0 cites·17 claims
- 2640US2020098912A1Transistor devices with control-terminal field plate structures in trenchesNXP USA INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →