Inventor · disambiguated record
Satoru Nagao
Also filed as: NAGAO SATORU
29 granted patents·2 pending applications·158 citations·filing 1994–2023
96Inventor score
Files withMITSUBISHI CHEM CORP24JAPAN SCIENCE & TECH AGENCY3MATSUMOTO KAZUHIKO3MITSUBISHI CHEMICAL COMPANY1
Top patents by PatentIndex Score
31 records- 0191US11038024B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 15, 2021·4 cites·19 claims
- 0291US10475887B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Nov 12, 2019·5 cites·15 claims
- 0391US7902089B2N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristicsJAPAN SCIENCE & TECH AGENCY·Filed 2006·Granted Mar 8, 2011·17 cites·8 claims
- 0489US11031475B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 8, 2021·3 cites·18 claims
- 0589US10655244B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2018·Granted May 19, 2020·2 cites·19 claims
- 0689US10066319B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Sep 4, 2018·6 cites·13 claims
- 0787US11664428B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2021·Granted May 30, 2023·1 cites·13 claims
- 0883US12107129B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 0981US8502277B2Field-effect transistor, single-electron transistor and sensor using the sameMATSUMOTO KAZUHIKO·Filed 2004·Granted Aug 6, 2013·15 cites·24 claims
- 1072US9506892B2Field-effect transistor, single-electron transistor and sensor using the sameJAPAN SCIENCE & TECH AGENCY·Filed 2014·Granted Nov 29, 2016·1 cites·22 claims
- 1160US10570530B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2018·Granted Feb 25, 2020·0 cites·18 claims
- 1260US5838028ASemiconductor device having a ridge or grooveMITSUBISHI CHEM CORP·Filed 1997·Granted Nov 17, 1998·25 cites·4 claims
- 1359US10023976B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2017·Granted Jul 17, 2018·0 cites·20 claims
- 1459US8772099B2Method of use of a field-effect transistor, single-electron transistor and sensorMATSUMOTO KAZUHIKO·Filed 2012·Granted Jul 8, 2014·0 cites·4 claims
- 1559US8766326B2Field-effect transistor, single-electron transistor and sensorMATSUMOTO KAZUHIKO·Filed 2012·Granted Jul 1, 2014·0 cites·8 claims
- 1658US9840791B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2014·Granted Dec 12, 2017·0 cites·17 claims
- 1757US6172998B1Semiconductor laser diodeMITSUBISHI CHEM CORP·Filed 1997·Granted Jan 9, 2001·20 cites·10 claims
- 1854US6265733B1Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 1997·Granted Jul 24, 2001·15 cites·16 claims
- 1952US6744066B2Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jun 1, 2004·3 cites·25 claims
- 2050US8008650B2Transistor with nanotube structure exhibiting N-type semiconductor-like characteristicsJAPAN SCIENCE & TECH AGENCY·Filed 2010·Granted Aug 30, 2011·0 cites·14 claims
- 2150US7102174B2Light emitting device and light emitting device moduleMITSUBISHI CHEM CORP·Filed 2001·Granted Sep 5, 2006·4 cites·2 claims
- 2250US5920767AMethod of forming a groove in a semiconductor laser diode and a semiconductor laser diodeMITSUBISHI CHEMICAL COMPANY·Filed 1996·Granted Jul 6, 1999·14 cites·2 claims
- 2348US5566198AMethod of forming a groove in a semiconductor laser diode and a semiconductor laser diodeMITSUBISHI CHEM CORP·Filed 1995·Granted Oct 15, 1996·13 cites·10 claims
- 2447US9502241B2Group III nitride crystal production method and group III nitride crystalMITSUBISHI CHEM CORP·Filed 2013·Granted Nov 22, 2016·0 cites·6 claims
- 2546US7164157B2Light emitting device and light emitting device moduleMITSUBISHI CHEM CORP·Filed 2005·Granted Jan 16, 2007·0 cites·26 claims
- 2646US6589807B2Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jul 8, 2003·1 cites·7 claims
- 2743US2004041162A1Semiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 2003·Application pending·0 cites
- 2841US2008063566A1Sensor Unit and Reaction Field Cell Unit and AnalyzerMITSUBISHI CHEM CORP·Filed 2005·Application pending·0 cites
- 2936US6639926B1Semiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 1999·Granted Oct 28, 2003·5 cites·25 claims
- 3031US6023483ASemiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 1998·Granted Feb 8, 2000·2 cites·18 claims
- 3131US5608751ALaser diode and process for producing the sameMITSUBISHI CHEM CORP·Filed 1994·Granted Mar 4, 1997·2 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →