Inventor · disambiguated record
Saehan Park
Also filed as: PARK SAEHAN
10 granted patents·8 pending applications·12 citations·filing 2021–2025
82Inventor score
Top patents by PatentIndex Score
18 records- 0195US11881455B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 23, 2024·5 cites·8 claims
- 0293US12125788B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 22, 2024·2 cites·11 claims
- 0390US12230571B2Integrated circuit devices including a power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·3 cites·14 claims
- 0489US11769728B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·9 claims
- 0574US2025031360A1Selective double diffusion break structures for multi-stack semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0673US2025056873A1Cross-coupled gate design for stacked device with separated top-down gateSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0772US2024429169A1Thermal budget enhanced buried power rail and method of manufacturing the sameSAMSUNG ELECTRONNICS CO LTD·Filed 2024·Application pending·0 cites
- 0870US12142564B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·11 claims
- 0961US12144163B2Selective double diffusion break structures for multi-stack semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·19 claims
- 1061US2025329650A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1159US12183738B2Cross-coupled gate design for stacked device with separated top-down gateSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·14 claims
- 1259US2022336355A1Thermal budget enhanced buried power rail and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 1355US12131996B2Stacked device with backside power distribution network and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·7 claims
- 1452US12374623B2Stacked semiconductor device architectureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 29, 2025·0 cites·18 claims
- 1552US12364018B2Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·12 claims
- 1652US2023352407A1Connection scheme with backside power distribution networkSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1751US2023343825A1Boundary gate structure for diffusion break in 3d-stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1847US2025351519A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Saehan Park files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →