Inventor · disambiguated record
Sanjay Rangan
Also filed as: RANGAN SANJAY
21 granted patents·1 pending application·52 citations·filing 2009–2023
93Inventor score
Top patents by PatentIndex Score
22 records- 0195US9299747B1Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniquesINTEL CORP·Filed 2014·Granted Mar 29, 2016·19 cites·16 claims
- 0291US11107523B1Multi-level cell (MLC) cross-point memoryINTEL CORP·Filed 2020·Granted Aug 31, 2021·3 cites·22 claims
- 0387US9608042B2Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniquesINTEL CORP·Filed 2016·Granted Mar 28, 2017·5 cites·20 claims
- 0484US11170853B2Modified write voltage for memory devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 9, 2021·2 cites·25 claims
- 0583US9384801B2Threshold voltage expansionINTEL CORP·Filed 2014·Granted Jul 5, 2016·8 cites·22 claims
- 0673US10248351B1Set technique for phase change memoryINTEL CORP·Filed 2017·Granted Apr 2, 2019·1 cites·24 claims
- 0772US9892785B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2017·Granted Feb 13, 2018·2 cites·20 claims
- 0870US10360977B2Tailoring current magnitude and duration during a programming pulse for a memory deviceINTEL CORP·Filed 2018·Granted Jul 23, 2019·2 cites·26 claims
- 0970US9583187B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2015·Granted Feb 28, 2017·2 cites·20 claims
- 1070US9575727B2Methods for generating random data using phase change materials and related devices and systemsSARPATWARI KARTHIK·Filed 2014·Granted Feb 21, 2017·2 cites·20 claims
- 1169US10957387B1Multi-level cell (MLC) techniques and circuits for cross-point memoryINTEL CORP·Filed 2019·Granted Mar 23, 2021·2 cites·17 claims
- 1269US8149680B2Random read/write performance of probe storage memory devicesRAO VALLURI R·Filed 2009·Granted Apr 3, 2012·2 cites·4 claims
- 1368US10783966B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 1464US11705197B2Modified write voltage for memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 1564US10884640B2Set technique for phase change memoryINTEL CORP·Filed 2019·Granted Jan 5, 2021·1 cites·27 claims
- 1664US10796761B2Tailoring current magnitude and duration during a programming pulse for a memory deviceINTEL CORP·Filed 2019·Granted Oct 6, 2020·1 cites·26 claims
- 1758US11810617B2Techniques for a multi-step current profile for a phase change memoryINTEL CORP·Filed 2022·Granted Nov 7, 2023·0 cites·23 claims
- 1857US2025120143A1Extended drain transistor for high voltage applicationsINTEL CORP·Filed 2023·Application pending·0 cites
- 1953US11100984B2Non volatile cross point memory having word line pass transistor with multiple active statesINTEL CORP·Filed 2020·Granted Aug 24, 2021·0 cites·20 claims
- 2052US11276462B2Techniques for a multi-step current profile for a phase change memoryINTEL CORP·Filed 2020·Granted Mar 15, 2022·0 cites·19 claims
- 2150US10446229B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2018·Granted Oct 15, 2019·0 cites·20 claims
- 2244US10185818B2Methods for generating random data using phase change materials and related devices and systemsINTEL CORP·Filed 2017·Granted Jan 22, 2019·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →