Inventor · disambiguated record
Saurabh Roy
Also filed as: ROY SAURABH
5 granted patents·7 pending applications·1 citations·filing 2021–2025
65Inventor score
Top patents by PatentIndex Score
12 records- 0184US2025380466A1Semiconductor device having a field plate electrode with an embedded strain-inducing materialINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 0281US11728427B2Power semiconductor device having a strain-inducing material embedded in an electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Aug 15, 2023·1 cites·30 claims
- 0374US12107128B2Method of producing a semiconductor device having a ferroelectric gate stackINFINEON TECHNOLOGIES AG·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 0473US12471324B2Power semiconductor device having an electrode with an embedded materialINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Nov 11, 2025·0 cites·13 claims
- 0565US11791383B2Semiconductor device having a ferroelectric gate stackINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 17, 2023·0 cites·23 claims
- 0661US12018387B2Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jun 25, 2024·0 cites·11 claims
- 0760US2024371772A1Vertical power semiconductor device having an interlayer dielectric structureINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0856US2024030032A1Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 0955US2024055257A1Method for manufacturing a contact on a silicon carbide substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1053US2024090355A1Piezoresistive transistor device and power electronic module including a piezoresistive transistor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1152US2023238442A1Semiconductor device with metal nitride layer and a method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1252US2023178615A1Trench power device with enhanced charge carrier mobilityINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →