Inventor · disambiguated record
Sanjeev Sapra
Also filed as: SAPRA SANJEEV
31 granted patents·6 pending applications·59 citations·filing 2010–2024
94Inventor score
Top patents by PatentIndex Score
37 records- 0196US9653307B1Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structuresMICRON TECHNOLOGY INC·Filed 2016·Granted May 16, 2017·23 cites·25 claims
- 0286US10811419B1Storage node shapingMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 0385US10497558B2Using sacrificial polymer materials in semiconductor processingMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 3, 2019·3 cites·21 claims
- 0484US9117759B2Methods of forming bulb-shaped trenches in siliconSAPRA SANJEEV·Filed 2011·Granted Aug 25, 2015·6 cites·21 claims
- 0583US10916418B2Using sacrificial polymer materials in semiconductor processingMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 9, 2021·2 cites·20 claims
- 0677US8283259B2Methods of removing a metal nitride materialSAPRA SANJEEV·Filed 2010·Granted Oct 9, 2012·3 cites·16 claims
- 0776US9230966B2Capacitor and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2014·Granted Jan 5, 2016·4 cites·4 claims
- 0876US8569130B2Forming air gaps in memory arrays and memory arrays with air gaps thus formedMATHEW JAMES·Filed 2011·Granted Oct 29, 2013·4 cites·28 claims
- 0976US8283236B2Methods of forming capacitorsGOODNER DUANE M·Filed 2011·Granted Oct 9, 2012·5 cites·24 claims
- 1071US11651952B2Using sacrificial polymer materials in semiconductor processingMICRON TECHNOLOGY INC·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 1171US11011523B2Column formation using sacrificial materialMICRON TECHNOLOGY INC·Filed 2019·Granted May 18, 2021·1 cites·24 claims
- 1269US11011521B2Semiconductor structure patterningMICRON TECHNOLOGY INC·Filed 2019·Granted May 18, 2021·1 cites·21 claims
- 1368US10978553B2Formation of a capacitor using a hard maskMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 13, 2021·1 cites·26 claims
- 1468US8546016B2Solutions for cleaning semiconductor structures and related methodsSAPRA SANJEEV·Filed 2011·Granted Oct 1, 2013·2 cites·22 claims
- 1565US11469103B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 1662US2024341079A1Wordline recess formation and resulting structuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1761US2024389302A1Contact foot wet pullback with liner wet punchMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1860US12193208B2Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·15 claims
- 1959US10930499B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 23, 2021·0 cites·9 claims
- 2056US2025183176A1Microelectronic devices comprising silicon carbon materials and related methodsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2155US12432943B2Over-sculpted storage nodeMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 30, 2025·0 cites·19 claims
- 2253US8586483B2Semiconductor device structures and compositions for forming sameSAPRA SANJEEV·Filed 2012·Granted Nov 19, 2013·0 cites·17 claims
- 2351US11114443B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 7, 2021·0 cites·21 claims
- 2451US10546923B2Semiconductor assemblies having semiconductor material regions with contoured upper surfaces; and methods of forming semiconductor assemblies utilizing etching to contour upper surfaces of semiconductor materialMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 28, 2020·0 cites·17 claims
- 2551US10374033B1Semiconductor assemblies having semiconductor material regions with contoured upper surfacesMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 6, 2019·0 cites·11 claims
- 2651US9397210B2Forming air gaps in memory arrays and memory arrays with air gaps thus formedMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 19, 2016·0 cites·23 claims
- 2750US11127588B2Semiconductor processing applying supercritical dryingMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 21, 2021·0 cites·25 claims
- 2849US2023354585A1Digit line and cell contact isolationMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2947US11322388B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted May 3, 2022·0 cites·12 claims
- 3047US10777561B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 15, 2020·0 cites·16 claims
- 3146US10978306B2Semiconductor recess formationMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 13, 2021·0 cites·13 claims
- 3246US2015340320A1Semiconductor devices including bulb-shaped trenchesMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 3344US10607851B2Vapor-etch cyclic processMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 31, 2020·0 cites·26 claims
- 3443US10964475B2Formation of a capacitor using a sacrificial layerMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·24 claims
- 3543US8766347B2CapacitorsGOODNER DUANE M·Filed 2012·Granted Jul 1, 2014·0 cites·7 claims
- 3640US2016013191A1Capacitor and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2015·Application pending·0 cites
- 3736US11361972B2Methods for selectively removing more-doped-silicon-dioxide relative to less-doped-silicon-dioxideMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 14, 2022·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →