Inventor · disambiguated record
Sandip Tiwari
Also filed as: TIWARI SANDIP · TIWARI SANDIP B
47 granted patents·3 pending applications·3,889 citations·filing 1983–2013
99Inventor score
Files withIBM30CORNELL RES FOUNDATION INC5TIWARI SANDIP3MOMENTIVE PERFORMANCE MAT INC2REUTER MARK C2
Top patents by PatentIndex Score
50 records- 0199US6600173B2Low temperature semiconductor layering and three-dimensional electronic circuits using the layeringCORNELL RES FOUNDATION INC·Filed 2001·Granted Jul 29, 2003·436 cites·38 claims
- 0299US5998292AMethod for making three dimensional circuit integrationIBM·Filed 1997·Granted Dec 7, 1999·669 cites·20 claims
- 0398US6057212AMethod for making bonded metal back-plane substratesIBM·Filed 1998·Granted May 2, 2000·388 cites·26 claims
- 0498US5714766ANano-structure memory deviceIBM·Filed 1995·Granted Feb 3, 1998·372 cites·36 claims
- 0597US6953958B2Electronic gain cell based charge sensorCORNELL RES FOUNDATION INC·Filed 2003·Granted Oct 11, 2005·222 cites·9 claims
- 0697US6333532B1Patterned SOI regions in semiconductor chipsIBM·Filed 1999·Granted Dec 25, 2001·232 cites·27 claims
- 0797US6316309B1Method of forming self-isolated and self-aligned 4F-square vertical FET-trench DRAM cellsFiled 2000·Granted Nov 13, 2001·130 cites·5 claims
- 0896US5937295ANano-structure memory deviceIBM·Filed 1997·Granted Aug 10, 1999·163 cites·3 claims
- 0995US6750471B2Molecular memory & logicIBM·Filed 2002·Granted Jun 15, 2004·99 cites·16 claims
- 1095US5739057AMethod of making self-aligned dual gate MOSFET with an ultranarrow channelFiled 1996·Granted Apr 14, 1998·152 cites·19 claims
- 1195US5508543ALow voltage memoryIBM·Filed 1994·Granted Apr 16, 1996·140 cites·32 claims
- 1291US8974775B2Silicone ionomer compositionSAXENA ANUBHAV·Filed 2012·Granted Mar 10, 2015·7 cites·33 claims
- 1390US7365398B2Compact SRAMs and other multiple transistor structuresCORNELL RES FOUNDATION INC·Filed 2005·Granted Apr 29, 2008·16 cites·22 claims
- 1489US6248626B1Floating back gate electrically erasable programmable read-only memory (EEPROM)IBM·Filed 1998·Granted Jun 19, 2001·72 cites·12 claims
- 1589US6137128ASelf-isolated and self-aligned 4F-square vertical fet-trench dram cellsIBM·Filed 1998·Granted Oct 24, 2000·67 cites·12 claims
- 1688US6756257B2Patterned SOI regions on semiconductor chipsIBM·Filed 2001·Granted Jun 29, 2004·34 cites·20 claims
- 1787US6472705B1Molecular memory & logicIBM·Filed 1998·Granted Oct 29, 2002·58 cites·8 claims
- 1886US9389511B2Methods of making patterned structures of materials, patterned structures of materials, and methods of using sameSCHWARTZ EVAN L·Filed 2012·Granted Jul 12, 2016·8 cites·14 claims
- 1986US6800518B2Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineeringIBM·Filed 2002·Granted Oct 5, 2004·44 cites·38 claims
- 2084US7057234B2Scalable nano-transistor and memory using back-side trappingCORNELL RES FOUNDATION INC·Filed 2003·Granted Jun 6, 2006·35 cites·64 claims
- 2183US9895306B2Personal care compositions containing end-functionalized ionic siliconeMOMENTIVE PERFORMANCE MAT INC·Filed 2013·Granted Feb 20, 2018·2 cites·16 claims
- 2283US6177289B1Lateral trench optical detectorsIBM·Filed 1998·Granted Jan 23, 2001·71 cites·10 claims
- 2382US5757038ASelf-aligned dual gate MOSFET with an ultranarrow channelIBM·Filed 1995·Granted May 26, 1998·48 cites·28 claims
- 2482US5363397AIntegrated short cavity laser with bragg mirrorsINTERNATIOAL BUSINESS MACHINES·Filed 1992·Granted Nov 8, 1994·48 cites·17 claims
- 2580US5098859AMethod for forming distributed barrier compound semiconductor contactsIBM·Filed 1988·Granted Mar 24, 1992·36 cites·5 claims
- 2677US9895307B2Personal care compositions containing ionic silicone and film-forming agentMOMENTIVE PERFORMANCE MAT INC·Filed 2013·Granted Feb 20, 2018·1 cites·20 claims
- 2777US6236060B1Light emitting structures in back-end of line silicon technologyIBM·Filed 1997·Granted May 22, 2001·65 cites·24 claims
- 2875US4558509AMethod for fabricating a gallium arsenide semiconductor deviceIBM·Filed 1984·Granted Dec 17, 1985·38 cites·11 claims
- 2971US4593307AHigh temperature stable ohmic contact to gallium arsenideIBM·Filed 1983·Granted Jun 3, 1986·22 cites·6 claims
- 3070US6534819B2Dense backplane cell for configurable logicCORNELL RES FOUNDATION INC·Filed 2001·Granted Mar 18, 2003·16 cites·13 claims
- 3169US6445032B1Floating back gate electrically erasable programmable read-only memory(EEPROM)IBM·Filed 1998·Granted Sep 3, 2002·24 cites·25 claims
- 3266US4586071AHeterostructure bipolar transistorIBM·Filed 1984·Granted Apr 29, 1986·17 cites·4 claims
- 3365US6069819AVariable threshold voltage DRAM cellIBM·Filed 1999·Granted May 30, 2000·22 cites·20 claims
- 3464US8539611B1Scanned probe microscopy (SPM) probe having angled tipREUTER MARK C·Filed 2012·Granted Sep 17, 2013·1 cites·15 claims
- 3561US8553455B2Shape memory deviceTIWARI SANDIP·Filed 2006·Granted Oct 8, 2013·2 cites·24 claims
- 3661US6350321B1UHV horizontal hot wall cluster CVD/growth designIBM·Filed 1998·Granted Feb 26, 2002·28 cites·14 claims
- 3760US5920086ALight emitting deviceIBM·Filed 1997·Granted Jul 6, 1999·20 cites·16 claims
- 3859US8080839B2Electro-mechanical transistorTIWARI SANDIP·Filed 2009·Granted Dec 20, 2011·2 cites·14 claims
- 3958US5086321AUnpinned oxide-compound semiconductor structures and method of forming sameIBM·Filed 1990·Granted Feb 4, 1992·28 cites·30 claims
- 4055US8987701B2Phase transition memories and transistorsTIWARI SANDIP·Filed 2010·Granted Mar 24, 2015·1 cites·42 claims
- 4154US2007148194A1Novel nanoemulsion formulationsAMIJI MANSOOR M·Filed 2006·Application pending·0 cites
- 4251US2008181946A1Controlled Release Delivery System For MetforminLOHRAY BRAJ BHUSHAN·Filed 2005·Application pending·0 cites
- 4349US4849802AThermally stable low resistance contactIBM·Filed 1988·Granted Jul 18, 1989·11 cites·21 claims
- 4447US6101117ATwo transistor single capacitor ferroelectric memoryIBM·Filed 1999·Granted Aug 8, 2000·10 cites·15 claims
- 4546US8893310B2Scanned probe microscopy (SPM) probe having angled tipREUTER MARK C·Filed 2012·Granted Nov 18, 2014·0 cites·19 claims
- 4645US5158896AMethod for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regionsIBM·Filed 1992·Granted Oct 27, 1992·11 cites·12 claims
- 4745US2006013876A1Novel floating dosage formLOHRAY BRAJ B·Filed 2003·Application pending·0 cites
- 4840US5162891AGroup III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating sameIBM·Filed 1991·Granted Nov 10, 1992·8 cites·9 claims
- 4940US4987095AMethod of making unpinned oxide-compound semiconductor structuresIBM·Filed 1988·Granted Jan 22, 1991·7 cites·37 claims
- 5039US6281551B1Back-plane for semiconductor deviceIBM·Filed 1999·Granted Aug 28, 2001·6 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →