Inventor · disambiguated record
San-De Tzu
Also filed as: TZU SAN-DE
42 granted patents·875 citations·filing 1997–2006
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG39REMARKABLE LTD1TAIWAN SEMICONDUCTORS MANUFACT1TAIWAN SEMINCONDUCTOR MFG CO L1
Top patents by PatentIndex Score
42 records- 0188US6022644AMask containing subresolution line to minimize proximity effect of contact holeTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 8, 2000·69 cites·9 claims
- 0286US6423455B1Method for fabricating a multiple masking layer photomaskTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 23, 2002·28 cites·14 claims
- 0384US6294295B1Variable transmittance phase shifter to compensate for side lobe problem on rim type attenuating phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 25, 2001·26 cites·21 claims
- 0484US5994009AInterlayer method utilizing CAD for process-induced proximity effect correctionTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Nov 30, 1999·67 cites·10 claims
- 0582US6134014AApparatus and method of inspecting phase shift masks using comparison of a mask die image to the mask image databaseTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 17, 2000·48 cites·16 claims
- 0677US6720116B1Process flow and pellicle type for 157 nm mask makingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 13, 2004·17 cites·31 claims
- 0776US6830853B1Chrome mask dry etching process to reduce loading effect and defectsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 14, 2004·18 cites·20 claims
- 0876US5935736AMask and method to eliminate side-lobe effects in attenuated phase shifting masksTAIWAN SEMICONDUCTORS MANUFACT·Filed 1997·Granted Aug 10, 1999·39 cites·20 claims
- 0976US5783337AProcess to fabricate a double layer attenuated phase shift mask (APSM) with chrome borderTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jul 21, 1998·39 cites·22 claims
- 1073US6872507B2Radiation correction method for electron beam lithographyTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 29, 2005·30 cites·12 claims
- 1173US6001512AMethod of blind border pattern layout for attenuated phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 14, 1999·34 cites·20 claims
- 1271US6403267B1Method for high transmittance attenuated phase-shifting mask fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 11, 2002·11 cites·18 claims
- 1371US6007324ADouble layer method for fabricating a rim type attenuating phase shifting maskTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 28, 1999·34 cites·22 claims
- 1468US6194103B1E-beam double exposure method for manufacturing ASPM mask with chrome borderTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 27, 2001·21 cites·18 claims
- 1568US5858591AOptical proximity correction during wafer processing through subfile bias modification with subsequent subfile mergingTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 12, 1999·28 cites·15 claims
- 1667US6277528B1Method to change transmittance of attenuated phase-shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 21, 2001·9 cites·19 claims
- 1766US7445159B2Dual trench alternating phase shift mask fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 4, 2008·3 cites·20 claims
- 1866US6495297B1Type mask for combining off axis illumination and attenuating phase shifting mask patternsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 17, 2002·7 cites·6 claims
- 1965US5888678AMask and simplified method of forming a mask integrating attenuating phase shifting mask patterns and binary mask patterns on the same mask substrateTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 30, 1999·25 cites·21 claims
- 2064US6432588B1Method of forming an improved attenuated phase-shifting photomaskTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 13, 2002·8 cites·20 claims
- 2164US6190809B1Cost-effective method to fabricate a combined attenuated-alternating phase shift maskTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 20, 2001·24 cites·42 claims
- 2264US6077633AMask and method of forming a mask for avoiding side lobe problems in forming contact holesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 20, 2000·30 cites·18 claims
- 2364US5853923ADouble layer method for fabricating a rim type attenuating phase shifting maskTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 29, 1998·23 cites·27 claims
- 2463US5792578AMethod of forming multiple layer attenuating phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 11, 1998·21 cites·22 claims
- 2562US6632590B1Enhance the process window of memory cell line/space dense pattern in sub-wavelength processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 14, 2003·8 cites·17 claims
- 2662US6093507ASimplified process for fabricating levinson and chromeless type phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 25, 2000·21 cites·21 claims
- 2762US6051347AApplication of e-beam proximity over-correction to compensate optical proximity effect in optical lithography processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 18, 2000·27 cites·32 claims
- 2861US6660653B1Dual trench alternating phase shift mask fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 9, 2003·19 cites·13 claims
- 2960US6630408B1Self alignment process to fabricate attenuated shifting mask with chrome borderTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 7, 2003·18 cites·10 claims
- 3058US6830702B2Single trench alternating phase shift mask fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 14, 2004·4 cites·14 claims
- 3158US5897979AMethod of forming multiple layer attenuating phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 27, 1999·17 cites·6 claims
- 3257US7033947B2Dual trench alternating phase shift mask fabricationTAIWAN SEMINCONDUCTOR MFG CO L·Filed 2003·Granted Apr 25, 2006·5 cites·13 claims
- 3356US6150058AMethod of making attenuating phase-shifting mask using different exposure dosesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 21, 2000·14 cites·10 claims
- 3451US6174801B1E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal lineTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·17 cites·29 claims
- 3550US6631307B1Use of logical operations in place of OPC softwareTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 7, 2003·12 cites·11 claims
- 3650US6251547B1Simplified process for making an outrigger type phase shift maskTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 26, 2001·12 cites·30 claims
- 3748US5817439AMethod of blind border pattern layout for attenuated phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·12 cites·24 claims
- 3847US6018392AApparatus and method for inspecting phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 25, 2000·10 cites·24 claims
- 3943US6261725B1Phase angle modulation of PSM by chemical treatment methodTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 17, 2001·8 cites·15 claims
- 4038US7434194B2Mask for fabricating semiconductor devices and method for designing the sameREMARKABLE LTD·Filed 2005·Granted Oct 7, 2008·0 cites·14 claims
- 4136US6301698B1Method for creating the sub-resolution phase shifting pattern for outrigger type phase shifting masksTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 9, 2001·4 cites·20 claims
- 4236US6171914B1Synchronized implant process to simplify NLDD/PLDD stage and N+/P+stage into one implantTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·8 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →