Inventor · disambiguated record
Sam Yang
Also filed as: YANG SAM · YANG SAM X
30 granted patents·7 pending applications·703 citations·filing 1997–2018
98Inventor score
Top patents by PatentIndex Score
37 records- 0197US6670256B2Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 30, 2003·121 cites·43 claims
- 0297US6596583B2Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 22, 2003·96 cites·9 claims
- 0397US6417537B1Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 9, 2002·117 cites·47 claims
- 0493US6746930B2Oxygen barrier for cell container processMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 8, 2004·60 cites·23 claims
- 0593US6524912B1Planarization of metal container structuresMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 25, 2003·58 cites·74 claims
- 0692US6617248B1Method for forming a ruthenium metal layerMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 9, 2003·51 cites·14 claims
- 0786US6727140B2Capacitor with high dielectric constant materials and method of makingMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 27, 2004·27 cites·29 claims
- 0884US6833576B2Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 21, 2004·20 cites·13 claims
- 0979US7378719B2Low leakage MIM capacitorMICRON TECHNOLOGY INC·Filed 2000·Granted May 27, 2008·19 cites·17 claims
- 1078US7018675B2Method for forming a ruthenium metal layerMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 28, 2006·14 cites·11 claims
- 1175US7435641B2Low leakage MIM capacitorMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 14, 2008·4 cites·26 claims
- 1275US7368343B2Low leakage MIM capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted May 6, 2008·14 cites·38 claims
- 1374US10774448B2Method of manufacturing a fabricJ Y RAYS INC·Filed 2018·Granted Sep 15, 2020·1 cites·10 claims
- 1474US6664583B2Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 16, 2003·12 cites·24 claims
- 1574US6631069B2Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 7, 2003·12 cites·35 claims
- 1671US8470665B2Low leakage MIM capacitorYANG SAM·Filed 2007·Granted Jun 25, 2013·3 cites·22 claims
- 1769US7053462B2Planarization of metal container structuresMICRON TECHNOLOGY INC·Filed 2002·Granted May 30, 2006·9 cites·15 claims
- 1868US6664584B2Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 16, 2003·11 cites·18 claims
- 1967US7015527B2Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 21, 2006·7 cites·24 claims
- 2064US8441077B2Method for forming a ruthenium metal layer and a structure comprising the ruthenium metal layerYANG SAM·Filed 2006·Granted May 14, 2013·1 cites·10 claims
- 2164US6576538B2Technique for high efficiency metalorganic chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 10, 2003·7 cites·30 claims
- 2263US7253076B1Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGIES INC·Filed 2000·Granted Aug 7, 2007·5 cites·26 claims
- 2363US6803621B2Oxygen barrier for cell container processMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 12, 2004·7 cites·25 claims
- 2461US6676756B1Technique for high efficiency metalorganic chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·6 cites·12 claims
- 2555US7192828B2Capacitor with high dielectric constant materials and method of makingMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 20, 2007·3 cites·11 claims
- 2655US2013221420A1Structure comprising a ruthenium metal materialMICRON TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 2755US2013285206A1Low leakage mim capacitorMICRON TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 2853US2006076597A1Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 2949US7214618B2Technique for high efficiency metalorganic chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2004·Granted May 8, 2007·2 cites·12 claims
- 3048US6586796B2Capacitor with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 1, 2003·1 cites·8 claims
- 3146US7002202B2Metal oxynitride capacitor barrier layerMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 21, 2006·1 cites·34 claims
- 3246US2005223978A1Technique for high efficiency metalorganic chemical vapor depositionLI WEIMIN·Filed 2005·Application pending·0 cites
- 3345US6921710B2Technique for high efficiency metalorganic chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 26, 2005·1 cites·9 claims
- 3443US5890366AHigh level oxygen air conditioningFiled 1997·Granted Apr 6, 1999·13 cites·13 claims
- 3542US2003003697A1Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHOLOGY INC·Filed 2002·Application pending·0 cites
- 3638US2003062558A1Memory cell capacitor structure and method of formationFiled 2002·Application pending·0 cites
- 3737US2002036313A1Memory cell capacitor structure and method of formationFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →