Inventor · disambiguated record
Sang-Bae Yi
Also filed as: YI SANG-BAE
12 granted patents·2 pending applications·61 citations·filing 1999–2015
88Inventor score
Files withSAMSUNG ELECTRONICS CO LTD5HYUNDAI ELECTRONICS IND4HYNIX ELECTRONICS IND CO LTD1HYNIX SEMICONDUCTOR INC1KIM MYUNG-HEE1
Top patents by PatentIndex Score
14 records- 0184US7593261B2EEPROM devices and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·9 cites·20 claims
- 0263US6580103B2Array of flash memory cells and data program and erase methods of the sameHYNIX ELECTRONICS IND CO LTD·Filed 2001·Granted Jun 17, 2003·12 cites·4 claims
- 0362US6207506B1Nonvolatile memory and method for fabricating the sameLG SEMICON CO LTD·Filed 1999·Granted Mar 27, 2001·21 cites·14 claims
- 0461US6410390B1Nonvolatile memory device and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 25, 2002·7 cites·24 claims
- 0560US8050091B2EEPROM devices and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 1, 2011·1 cites·20 claims
- 0653US6831863B2Array of flash memory cells and data program and erase methods of the sameHYUNDAI ELECTRONICS IND·Filed 2003·Granted Dec 14, 2004·5 cites·7 claims
- 0747US9679983B2Semiconductor devices including threshold voltage control regionsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·0 cites·10 claims
- 0845US6677638B2Nonvolatile memory device and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 2002·Granted Jan 13, 2004·2 cites·11 claims
- 0945US6597604B2Flash memory cell array and method for programming and erasing data using the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 22, 2003·4 cites·20 claims
- 1043US7446000B2Method of fabricating semiconductor device having gate dielectrics with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·20 claims
- 1141US8951866B2Methods of fabricating semiconductor devices and semiconductor devices including threshold voltage control regionsLEE MUENG-RYUL·Filed 2010·Granted Feb 10, 2015·0 cites·11 claims
- 1239US2007148851A1Method of programming eeprom having single gate structureKIM MYUNG-HEE·Filed 2006·Application pending·0 cites
- 1338US2007145467A1EEPROMs with Trenched Active Region Structures and Methods of Fabricating and Operating SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1435US6500716B2Method for fabricating high voltage transistorHYUNDAI ELECTRONICS IND·Filed 2001·Granted Dec 31, 2002·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →