Inventor · disambiguated record
Scott R. Summerfelt
Also filed as: SUMMERFELT SCOTT · SUMMERFELT SCOTT R · SUMMERFELT SCOTT ROBERT
200 granted patents·39 pending applications·7,984 citations·filing 1992–2024
99Inventor score
Files withTEXAS INSTRUMENTS INC195SUMMERFELT SCOTT R15AGILENT TECHNOLOGIES INC5CLINTON MICHAEL PATRICK4BASIM GUL B3
Top patents by PatentIndex Score
239 records- 0199US6291282B1Method of forming dual metal gate structures or CMOS devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Sep 18, 2001·387 cites·9 claims
- 0298US11195811B2Dielectric and metallic nanowire bond layersTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 7, 2021·7 cites·16 claims
- 0398US8247855B2Enhanced local interconnects employing ferroelectric electrodesSUMMERFELT SCOTT R·Filed 2006·Granted Aug 21, 2012·97 cites·19 claims
- 0498US6656748B2FeRAM capacitor post stack etch clean/repairTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 2, 2003·196 cites·14 claims
- 0598US6211035B1Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 3, 2001·370 cites·4 claims
- 0698US5566045AHigh-dielectric-constant material electrodes comprising thin platinum layersTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 15, 1996·151 cites·19 claims
- 0797US8717800B2Method and apparatus pertaining to a ferroelectric random access memoryCLINTON MICHAEL PATRICK·Filed 2011·Granted May 6, 2014·59 cites·6 claims
- 0897US8508974B2Ferroelectric memory with shunt deviceCLINTON MICHAEL PATRICK·Filed 2011·Granted Aug 13, 2013·60 cites·13 claims
- 0997US8441833B2Differential plate line screen test for ferroelectric latch circuitsSUMMERFELT SCOTT R·Filed 2012·Granted May 14, 2013·30 cites·9 claims
- 1097US6576546B2Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applicationsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jun 10, 2003·216 cites·28 claims
- 1196US6485988B2Hydrogen-free contact etch for ferroelectric capacitor formationTEXAS INSTRUMENTS INC·Filed 2000·Granted Nov 26, 2002·191 cites·8 claims
- 1296US5581436AHigh-dielectric-constant material electrodes comprising thin platinum layersTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 3, 1996·131 cites·22 claims
- 1396US5504041AConductive exotic-nitride barrier layer for high-dielectric-constant materialsTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 2, 1996·233 cites·12 claims
- 1496US5471364AElectrode interface for high-dielectric-constant materialsTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 28, 1995·137 cites·18 claims
- 1595US8440508B2Hydrogen barrier for ferroelectric capacitorsUDAYAKUMAR KEZHAKKEDATH R·Filed 2010·Granted May 14, 2013·32 cites·3 claims
- 1695US7029925B2FeRAM capacitor stack etchTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 18, 2006·167 cites·5 claims
- 1795US6635528B2Method of planarizing a conductive plug situated under a ferroelectric capacitorTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 21, 2003·119 cites·8 claims
- 1895US6548343B1Method of fabricating a ferroelectric memory cellAGILENT TECHNOLOGIES INC·Filed 2000·Granted Apr 15, 2003·152 cites·21 claims
- 1995US6534809B2Hardmask designs for dry etching FeRAM capacitor stacksTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 18, 2003·111 cites·19 claims
- 2095US6528386B1Protection of tungsten alignment mark for FeRAM processingTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 4, 2003·84 cites·23 claims
- 2195US5851896AConductive exotic-nitride barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 22, 1998·147 cites·10 claims
- 2295US5585300AMethod of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 17, 1996·106 cites·14 claims
- 2395US5489548AMethod of forming high-dielectric-constant material electrodes comprising sidewall spacersTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 6, 1996·201 cites·14 claims
- 2494US6500678B1Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processingTEXAS INSTRUMENTS INC·Filed 2001·Granted Dec 31, 2002·101 cites·27 claims
- 2594US6177351B1Method and structure for etching a thin film perovskite layerTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 23, 2001·173 cites·2 claims
- 2694US5619393AHigh-dielectric-constant material electrodes comprising thin ruthenium dioxide layersTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 8, 1997·103 cites·22 claims
- 2793US6713342B2FeRAM sidewall diffusion barrier etchTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 30, 2004·78 cites·25 claims
- 2893US6444542B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 3, 2002·51 cites·2 claims
- 2993US6320213B1Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising sameADVANCED TECH MATERIALS·Filed 1997·Granted Nov 20, 2001·178 cites·13 claims
- 3093US6215650B1Electrical connections to dielectric materialsTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 10, 2001·51 cites·12 claims
- 3193US6100200ASputtering process for the conformal deposition of a metallization or insulating layerADVANCED TECH MATERIALS·Filed 1998·Granted Aug 8, 2000·133 cites·50 claims
- 3293US5793057AConductive amorphous-nitride barrier layer for high dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 11, 1998·87 cites·14 claims
- 3393US5622893AMethod of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 22, 1997·86 cites·14 claims
- 3493US5612574ASemiconductor structures using high-dielectric-constant materials and an adhesion layerTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 18, 1997·124 cites·20 claims
- 3593US5589284AElectrodes comprising conductive perovskite-seed layers for perovskite dielectricsTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 31, 1996·78 cites·13 claims
- 3693US5554564APre-oxidizing high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 10, 1996·84 cites·21 claims
- 3792US7935543B2Method of forming PZT ferroelectric capacitors for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2009·Granted May 3, 2011·20 cites·20 claims
- 3892US5729054AConductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 17, 1998·94 cites·14 claims
- 3992US5576928AHigh-dielectric-constant material electrodes comprising thin platinum layersTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 19, 1996·80 cites·20 claims
- 4091US6734477B2Fabricating an embedded ferroelectric memory cellAGILENT TECHNOLOGIES INC·Filed 2001·Granted May 11, 2004·79 cites·10 claims
- 4191US5554866APre-oxidizing high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 10, 1996·80 cites·18 claims
- 4291US5326721AMethod of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layerTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 5, 1994·72 cites·19 claims
- 4390US8472236B2Differential plate line screen test for ferroelectric latch circuitsTEXAS INSTRUMENTS INC·Filed 2012·Granted Jun 25, 2013·10 cites·10 claims
- 4490US5972722AAdhesion promoting sacrificial etch stop layer in advanced capacitor structuresTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 26, 1999·107 cites·11 claims
- 4590US5679980AConductive exotic-nitride barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1996·Granted Oct 21, 1997·88 cites·6 claims
- 4690US5520992AElectrodes for high dielectric constant materialsTEXAS INSTRUMENTS INC·Filed 1993·Granted May 28, 1996·81 cites·13 claims
- 4789US6635498B2Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etchTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 21, 2003·48 cites·38 claims
- 4889US6362068B1Electrode interface for high-dielectric-constant materialsTEXAS INSTRUMENTS INC·Filed 1998·Granted Mar 26, 2002·61 cites·6 claims
- 4989US5696018AMethod of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 9, 1997·74 cites·17 claims
- 5089US5665628AMethod of forming conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 9, 1997·66 cites·18 claims
Showing the top 50 of 239 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →