Inventor · disambiguated record
Schyi-Yi Wu
Also filed as: WU SCHYI-YI
16 granted patents·1 pending application·260 citations·filing 1982–2008
94Inventor score
Top patents by PatentIndex Score
17 records- 0187US7265041B2Gate layouts for transistorsMICREL INC·Filed 2005·Granted Sep 4, 2007·15 cites·12 claims
- 0285US5060031AComplementary heterojunction field effect transistor with an anisotype N+ ga-channel devicesMOTOROLA INC·Filed 1990·Granted Oct 22, 1991·63 cites·12 claims
- 0373US4692343APlasma enhanced CVDSPECTRUM CVD INC·Filed 1986·Granted Sep 8, 1987·30 cites·6 claims
- 0472US4737474ASilicide to silicon bonding processSPECTRUM CVD INC·Filed 1986·Granted Apr 12, 1988·28 cites·8 claims
- 0567US4777061ABlanket tungsten deposition for dielectricSPECTRUM CVD INC·Filed 1987·Granted Oct 11, 1988·24 cites·4 claims
- 0666US4456489AMethod of forming a shallow and high conductivity boron doped layer in siliconMOTOROLA INC·Filed 1982·Granted Jun 26, 1984·27 cites·11 claims
- 0758US4621413AFabricating a semiconductor device with reduced gate leakageMOTOROLA INC·Filed 1985·Granted Nov 11, 1986·25 cites·11 claims
- 0855US5275971AMethod of forming an ohmic contact to III-V semiconductor materialsMOTOROLA INC·Filed 1992·Granted Jan 4, 1994·14 cites·22 claims
- 0950US7645691B2Method for forming zener zap diodes and ohmic contacts in the same integrated circuitMICREL INC·Filed 2008·Granted Jan 12, 2010·0 cites·5 claims
- 1047US5430327AOhmic contact for III-V semiconductor materialsMOTOROLA INC·Filed 1993·Granted Jul 4, 1995·9 cites·3 claims
- 1146US7479444B2Method for forming Schottky diodes and ohmic contacts in the same integrated circuitMICREL INC·Filed 2006·Granted Jan 20, 2009·0 cites·13 claims
- 1242US7572707B2Method of manufacturing NPN deviceMICREL INC·Filed 2007·Granted Aug 11, 2009·0 cites·6 claims
- 1342US2009026578A1Vertical NPN Transistor Fabricated in a CMOS Process With Improved Electrical CharacteristicsMICREL INC·Filed 2007·Application pending·0 cites
- 1438US5411903ASelf-aligned complementary HFETSMOTOROLA INC·Filed 1993·Granted May 2, 1995·6 cites·8 claims
- 1536US5583355ASelf-aligned FET having etched ohmic contactsMOTOROLA INC·Filed 1995·Granted Dec 10, 1996·4 cites·5 claims
- 1636US5482872AMethod of forming isolation region in a compound semiconductor substrateMOTOROLA INC·Filed 1994·Granted Jan 9, 1996·8 cites·10 claims
- 1733US5073507AProducing a plasma containing beryllium and beryllium fluorideMOTOROLA INC·Filed 1991·Granted Dec 17, 1991·7 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →