Inventor · disambiguated record
Seok Cheon Baek
Also filed as: BAEK SEOK-CHEON
35 granted patents·2 pending applications·132 citations·filing 2015–2025
96Inventor score
Top patents by PatentIndex Score
37 records- 0197US9419013B1Semiconductor device and method of manufacturing the sameLEE DONG SIK·Filed 2015·Granted Aug 16, 2016·71 cites·15 claims
- 0296US10685975B2Vertical memory device and method of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·15 cites·20 claims
- 0395US10950628B2Vertical memory device and method of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
- 0493US11398491B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 26, 2022·2 cites·11 claims
- 0590US10991717B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 27, 2021·6 cites·20 claims
- 0687US10777577B23-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 15, 2020·5 cites·20 claims
- 0787US10535679B2Semiconductor device including stack structures having R-type pad and P-type pad of different thicknessSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 14, 2020·4 cites·20 claims
- 0886US2025301656A1Vertical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0984US10818684B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·3 cites·20 claims
- 1083US10950624B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 16, 2021·5 cites·19 claims
- 1183US10903229B2Three-dimensional semiconductor memory device with central connection through regionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 26, 2021·3 cites·18 claims
- 1283US10573657B2Non-volatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 25, 2020·3 cites·20 claims
- 1379US10128263B2Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 13, 2018·2 cites·20 claims
- 1478US11037950B2Semiconductor memory device, semiconductor device, and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 1577US10818547B2Method of manufacturing semiconductor device having a structure pattern having a plurality of trenchesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·2 cites·20 claims
- 1676US11133267B2Semiconductor device including a peripheral circuit region and memory cell regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 28, 2021·2 cites·20 claims
- 1775US12349360B2Vertical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1875US10930664B2Semiconductor devices including channel structuresSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·2 cites·16 claims
- 1970US11626421B2Vertical memory device and method of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2067US10971432B2Semiconductor device including a through wiring areaSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 6, 2021·1 cites·19 claims
- 2163US11903206B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2263US11882701B2Semiconductor device including multi-stack structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 23, 2024·0 cites·14 claims
- 2363US11495495B2Method of manufacturing semiconductor device having a structure pattern having a plurality of trenchesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 2462US11791287B2Semiconductor device including a cutting region having a height greater than a height of a channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 2562US10868038B2Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·17 claims
- 2661US11322510B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·0 cites·7 claims
- 2760US11264401B2Vertical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·21 claims
- 2860US10373975B2Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 6, 2019·0 cites·15 claims
- 2959US11004860B2Non-volatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims
- 3058US10651198B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 12, 2020·1 cites·18 claims
- 3157US11145672B2Semiconductor device including stack structures having gate pads with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·19 claims
- 3255US11342351B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 24, 2022·0 cites·19 claims
- 3354US11056502B2Semiconductor device including multi-stack structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3451US11678485B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 3547US11476265B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 18, 2022·0 cites·20 claims
- 3643US10833093B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 10, 2020·0 cites·18 claims
- 3740US2019378850A1Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →