Inventor · disambiguated record
Seon Yong Cha
Also filed as: CHA SEON-YONG
15 granted patents·5 pending applications·90 citations·filing 2002–2024
91Inventor score
Top patents by PatentIndex Score
20 records- 0190US11887654B2Vertical memory deviceSK HYNIX INC·Filed 2022·Granted Jan 30, 2024·1 cites·11 claims
- 0290US11501827B2Vertical memory device with a double word line structureSK HYNIX INC·Filed 2019·Granted Nov 15, 2022·5 cites·20 claims
- 0389US11355177B2Vertical memory deviceSK HYNIX INC·Filed 2020·Granted Jun 7, 2022·2 cites·23 claims
- 0486US6649953B2Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cellHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 18, 2003·38 cites·10 claims
- 0582US12230313B2Vertical memory deviceSK HYNIX INC·Filed 2023·Granted Feb 18, 2025·0 cites·10 claims
- 0680US2025037758A1Vertical memory device with a double word line structureSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0776US12131774B2Vertical memory device with a double word line structureSK HYNIX INC·Filed 2022·Granted Oct 29, 2024·0 cites·5 claims
- 0874US2024057309A1Memory cell and memory deviceSK HYNIX INC·Filed 2023·Application pending·0 cites
- 0970US7799641B2Method for forming a semiconductor device having recess channelHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Sep 21, 2010·4 cites·13 claims
- 1070US6855564B2Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cellHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Feb 15, 2005·14 cites·7 claims
- 1167US11832434B2Memory cell and memory deviceSK HYNIX INC·Filed 2021·Granted Nov 28, 2023·0 cites·18 claims
- 1267US8053817B2Vertical transistor and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 8, 2011·2 cites·5 claims
- 1360US6885578B2NAND-type magnetoresistive RAMHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 26, 2005·11 cites·7 claims
- 1449US7095069B2Magnetoresistive random access memory, and manufacturing method thereofHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 22, 2006·6 cites·3 claims
- 1549US6503795B2Method for fabricating a semiconductor device having a storage cellHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 7, 2003·4 cites·2 claims
- 1649US2008290390A1Semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1743US8198161B2Vertical transistor and method for forming the sameCHA SEON YONG·Filed 2011·Granted Jun 12, 2012·0 cites·18 claims
- 1842US2010203696A1Semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 1941US7019370B2Method for manufacturing magnetic random access memoryHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·3 cites·1 claims
- 2040US2008277741A1Semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →