Inventor · disambiguated record
Seiji Inumiya
Also filed as: INUMIYA SEIJI
51 granted patents·14 pending applications·1,010 citations·filing 1997–2018
98Inventor score
Top patents by PatentIndex Score
65 records- 0199US6054355AMethod of manufacturing a semiconductor device which includes forming a dummy gateTOSHIBA KK·Filed 1998·Granted Apr 25, 2000·338 cites·23 claims
- 0296US9362487B2Ferroelectric memory and manufacturing method of the sameTOSHIBA KK·Filed 2013·Granted Jun 7, 2016·32 cites·3 claims
- 0395US10096619B2Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layerTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 9, 2018·14 cites·8 claims
- 0495US6515338B1Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2000·Granted Feb 4, 2003·82 cites·17 claims
- 0595US6251763B1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 1998·Granted Jun 26, 2001·114 cites·14 claims
- 0694US6784508B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2001·Granted Aug 31, 2004·65 cites·7 claims
- 0793US6664592B2Semiconductor device with groove type channel structureTOSHIBA KK·Filed 2002·Granted Dec 16, 2003·60 cites·2 claims
- 0889US7947610B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted May 24, 2011·10 cites·1 claims
- 0987US6787827B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2002·Granted Sep 7, 2004·30 cites·6 claims
- 1085US7294878B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 13, 2007·13 cites·8 claims
- 1184US6924536B2Semiconductor device and its manufacturing methodTOSHIBA KK·Filed 2003·Granted Aug 2, 2005·25 cites·28 claims
- 1284US6844234B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Jan 18, 2005·21 cites·10 claims
- 1381US6313047B2MOCVD method of tantalum oxide filmTOKYO ELECTRON LTD·Filed 2001·Granted Nov 6, 2001·27 cites·22 claims
- 1479US7306994B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Dec 11, 2007·15 cites·11 claims
- 1578US8143676B2Semiconductor device having a high-dielectric-constant gate insulating filmINUMIYA SEIJI·Filed 2008·Granted Mar 27, 2012·6 cites·6 claims
- 1678US6294481B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Sep 25, 2001·33 cites·5 claims
- 1778US6017809AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1997·Granted Jan 25, 2000·41 cites·29 claims
- 1877US8404575B2Semiconductor device and method for manufacturing sameKANEKO AKIO·Filed 2011·Granted Mar 26, 2013·3 cites·10 claims
- 1976US8084834B2Semiconductor device and method for manufacturing sameKANEKO AKIO·Filed 2009·Granted Dec 27, 2011·4 cites·26 claims
- 2076US6383856B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2001·Granted May 7, 2002·16 cites·5 claims
- 2170US6403997B1Method for manufacturing semiconductor devicesTOSHIBA KK·Filed 2000·Granted Jun 11, 2002·11 cites·7 claims
- 2269US7375403B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 20, 2008·11 cites·4 claims
- 2367US8039333B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Granted Oct 18, 2011·2 cites·12 claims
- 2466US8071447B2Semiconductor device manufacturing methodINUMIYA SEIJI·Filed 2010·Granted Dec 6, 2011·2 cites·19 claims
- 2566US7727832B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jun 1, 2010·2 cites·18 claims
- 2666US7687869B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Mar 30, 2010·2 cites·15 claims
- 2766US7652341B2Semiconductor apparatus having a semicondutor element with a high dielectric constant filmTOSHIBA KK·Filed 2007·Granted Jan 26, 2010·2 cites·20 claims
- 2866US7521263B2Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor deviceTOSHIBA KK·Filed 2005·Granted Apr 21, 2009·2 cites·14 claims
- 2965US7368780B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted May 6, 2008·4 cites·1 claims
- 3062US7989896B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Granted Aug 2, 2011·2 cites·8 claims
- 3158US2010003813A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Application pending·0 cites
- 3257US8183641B2Semiconductor device and method for manufacturing sameINUMIYA SEIJI·Filed 2009·Granted May 22, 2012·1 cites·7 claims
- 3357US7858536B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Dec 28, 2010·0 cites·7 claims
- 3456US7265427B2Semiconductor apparatus and method of manufacturing the semiconductor apparatusTOSHIBA KK·Filed 2004·Granted Sep 4, 2007·5 cites·13 claims
- 3556US7091135B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Aug 15, 2006·6 cites·17 claims
- 3655US7824976B2Semiconductor apparatus and method of manufacturing the semiconductor apparatusTOSHIBA KK·Filed 2009·Granted Nov 2, 2010·0 cites·6 claims
- 3754US7282774B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Oct 16, 2007·0 cites·4 claims
- 3854US2007197048A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 3954US2009000547A1Semiconductor device fabrication method and fabrication apparatusTOSHIBA KK·Filed 2008·Application pending·0 cites
- 4052US7816215B2Semiconductor device manufacturing methodTOSHIBA KK·Filed 2004·Granted Oct 19, 2010·3 cites·21 claims
- 4151US7501335B2Semiconductor device and manufacturing method of the sameTOSHIBA KK·Filed 2004·Granted Mar 10, 2009·2 cites·11 claims
- 4251US7427518B2Semiconductor device fabrication method and fabrication apparatusTOSHIBA KK·Filed 2005·Granted Sep 23, 2008·0 cites·17 claims
- 4351US7220681B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2005·Granted May 22, 2007·0 cites·14 claims
- 4450US10985104B2Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereofTOSHIBA KK·Filed 2018·Granted Apr 20, 2021·0 cites·15 claims
- 4550US8461006B2Semiconductor device and method for manufacturing the sameKOYAMA MASATO·Filed 2012·Granted Jun 11, 2013·0 cites·20 claims
- 4649US7968397B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2010·Granted Jun 28, 2011·0 cites·15 claims
- 4748US8435858B2Semiconductor device manufacturing methodINUMIYA SEIJI·Filed 2011·Granted May 7, 2013·0 cites·11 claims
- 4848US2005179091A1Semiconductor device and its manufacturing methodTOSHIBA KK·Filed 2005·Application pending·0 cites
- 4947US8168499B2Semiconductor device and method for manufacturing the sameKOYAMA MASATO·Filed 2010·Granted May 1, 2012·0 cites·22 claims
- 5047US7129125B2Semiconductor device and manufacturing method thereof including heating a silicon oxide in a helium gasTOSHIBA KK·Filed 2004·Granted Oct 31, 2006·2 cites·5 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →