Inventor · disambiguated record
Se-Myeong Jang
Also filed as: JANG SE-MYEONG
34 granted patents·1 pending application·319 citations·filing 2001–2020
97Inventor score
Top patents by PatentIndex Score
35 records- 0195US9634012B2Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 25, 2017·15 cites·20 claims
- 0294US6458653B1Method for forming lower electrode of cylinder-shaped capacitor preventing twin bit failureSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 1, 2002·100 cites·20 claims
- 0392US7728381B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·18 cites·13 claims
- 0491US7223649B2Method of fabricating transistor of DRAM semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 29, 2007·59 cites·61 claims
- 0588US7592686B2Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 22, 2009·13 cites·11 claims
- 0686US8928073B2Semiconductor devices including guard ring structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 6, 2015·8 cites·19 claims
- 0784US9570510B2Magnetoresistive random access memory devices and methods of manufacturing the sameKIM EUN-JUNG·Filed 2015·Granted Feb 14, 2017·6 cites·20 claims
- 0884US7952140B2Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 31, 2011·6 cites·20 claims
- 0981US8008163B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 30, 2011·6 cites·10 claims
- 1081US7803684B2Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·6 cites·18 claims
- 1181US7655988B2Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·8 cites·14 claims
- 1280US8497175B2Method of fabricating FinFET devicesKAHNG JAE-ROK·Filed 2010·Granted Jul 30, 2013·6 cites·21 claims
- 1380US7586150B2Semiconductor devices with local recess channel transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 8, 2009·7 cites·14 claims
- 1478US8697579B2Method of forming an isolation structure and method of forming a semiconductor devicePARK JOO-SUNG·Filed 2012·Granted Apr 15, 2014·5 cites·20 claims
- 1576US9972527B2Semiconductor device including air spacerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·4 cites·19 claims
- 1675US9281362B2Semiconductor device and method of manufacturing the sameLEE JA-YOUNG·Filed 2014·Granted Mar 8, 2016·6 cites·20 claims
- 1775US7691689B2Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 6, 2010·4 cites·21 claims
- 1875US7501668B2Semiconductor memory devices having contact pads with silicide caps thereonSAMUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·5 cites·17 claims
- 1974US8809993B2Semiconductor device having isolation regionSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 19, 2014·4 cites·20 claims
- 2069US7842572B2Methods of manufacturing semiconductor devices with local recess channel transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·3 cites·23 claims
- 2168US8293644B2Methods of manufacturing a semiconductor memory deviceJANG SE-MYEONG·Filed 2010·Granted Oct 23, 2012·4 cites·13 claims
- 2267US8987907B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 24, 2015·2 cites·22 claims
- 2366US7737512B2Integrated circuit devices having uniform silicide junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 15, 2010·2 cites·38 claims
- 2465US9536884B2Semiconductor device having positive fixed charge containing layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 3, 2017·1 cites·20 claims
- 2563US11355349B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 2661US7700445B2Method for fabricating multiple FETs of different typesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·2 cites·20 claims
- 2760US6656790B2Method for manufacturing a semiconductor device including storage nodes of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 2, 2003·9 cites·7 claims
- 2859US7329927B2Integrated circuit devices having uniform silicide junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 12, 2008·1 cites·22 claims
- 2957US10867802B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·9 claims
- 3056US6974752B2Methods of fabricating integrated circuit devices having uniform silicide junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 13, 2005·5 cites·27 claims
- 3153US7935600B2Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·0 cites·20 claims
- 3252US7144798B2Semiconductor memory devices having extending contact pads and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 5, 2006·4 cites·58 claims
- 3349US7833864B2Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 16, 2010·0 cites·23 claims
- 3446US11676816B2Method of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 13, 2023·0 cites·19 claims
- 3538US2019355813A1Semiconductor device including device isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →