Inventor · disambiguated record
Seung Woo Jin
Also filed as: JIN SEUNG E · JIN SEUNG W · JIN SEUNG WOO
29 granted patents·9 pending applications·162 citations·filing 1999–2024
95Inventor score
Top patents by PatentIndex Score
38 records- 0197US7470593B2Method for manufacturing a cell transistor of a semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Dec 30, 2008·94 cites·6 claims
- 0284US7511337B2Recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·8 cites·3 claims
- 0382US7687852B2Recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 30, 2010·6 cites·2 claims
- 0481US7955074B2Apparatus and method for thermally treating semiconductor device capable of preventing wafer from warpingHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jun 7, 2011·7 cites·2 claims
- 0574US2024413088A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0673US7365406B2Non-uniform ion implantation apparatus and method thereofHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Apr 29, 2008·3 cites·15 claims
- 0772US7576339B2Ion implantation apparatus and method for obtaining non-uniform ion implantation energyHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 18, 2009·5 cites·11 claims
- 0871US9245756B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 26, 2016·2 cites·23 claims
- 0968US8343859B2Non-uniform ion implantation apparatus and method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jan 1, 2013·2 cites·18 claims
- 1066US7488959B2Apparatus and method for partial ion implantationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 10, 2009·2 cites·16 claims
- 1164US7678653B2Method of fabricating a recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 16, 2010·1 cites·7 claims
- 1263US7790551B2Method for fabricating a transistor having a recess gate structureHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 7, 2010·1 cites·5 claims
- 1362US2022359400A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2021·Application pending·0 cites
- 1461US7351627B2Method of manufacturing semiconductor device using gate-through ion implantationHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Apr 1, 2008·1 cites·5 claims
- 1559US7825015B2Method for implanting ions in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 2, 2010·5 cites·9 claims
- 1653US7186627B2Method for forming device isolation film of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Mar 6, 2007·5 cites·15 claims
- 1752US7052981B2Ion implantation methodHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 30, 2006·3 cites·15 claims
- 1851US7700442B2Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·0 cites·7 claims
- 1950US7279691B2Ion implantation apparatus and method for implanting ions by using the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Oct 9, 2007·2 cites·16 claims
- 2049US7186647B2Method for fabricating semiconductor device having landing plug contact structureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Mar 6, 2007·3 cites·18 claims
- 2149US6569728B2Method for manufacturing a capacitor for use in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted May 27, 2003·4 cites·17 claims
- 2249US2007120182A1Transistor having recess gate structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2348US2008019204A1Apparatus and Method for Supplying Power in Semiconductor DeviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2446US9570308B2Method of forming regions with hot and cold implantsSK HYNIX INC·Filed 2015·Granted Feb 14, 2017·0 cites·8 claims
- 2546US7855113B2Method for fabricating semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Dec 21, 2010·0 cites·10 claims
- 2646US7208419B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 24, 2007·2 cites·22 claims
- 2745US7554106B2Partial ion implantation apparatus and method using bundled beamHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jun 30, 2009·0 cites·15 claims
- 2845US7186631B2Method for manufacturing a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Mar 6, 2007·0 cites·13 claims
- 2943US6979611B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 27, 2005·1 cites·18 claims
- 3041US7687350B2Method for manufacturing semiconductor memory device using asymmetric junction ion implantationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 30, 2010·0 cites·8 claims
- 3139US6927152B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 9, 2005·0 cites·9 claims
- 3239US2005136628A1Method for implanting ions in semiconductor process and method for fabricating semiconductor device using the sameFiled 2004·Application pending·0 cites
- 3338US8951857B2Method for implanting ions in semiconductor deviceSOHN YOUNG-SUN·Filed 2010·Granted Feb 10, 2015·0 cites·20 claims
- 3438US2004137678A1Method for forming capacitor of semiconductor deviceFiled 2003·Application pending·0 cites
- 3538US2006264013A1Method for implanting ions to a wafer for manufacturing of semiconductor device and method of fabricating graded junction using the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 3638US2004126946A1Method for forming transistor of semiconductor deviceFiled 2003·Application pending·0 cites
- 3736US6248619B1Method of manufacturing a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jun 19, 2001·5 cites·14 claims
- 3834US2012208333A1Method for fabricating semiconductor deviceLEE AN BAE·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →