Inventor · disambiguated record
Seong-Ook Jung
Also filed as: JUNG SEONG-OOK
95 granted patents·14 pending applications·982 citations·filing 1994–2024
99Inventor score
Files withQUALCOMM INC34JUNG SEONG-OOK15SAMSUNG ELECTRONICS CO LTD14UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV14UNIV YONSEI IACF11
Top patents by PatentIndex Score
109 records- 0197US8144509B2Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell sizeJUNG SEONG-OOK·Filed 2008·Granted Mar 27, 2012·62 cites·29 claims
- 0296US10224087B1Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cellsQUALCOMM TECHNOLOGIES INC·Filed 2017·Granted Mar 5, 2019·23 cites·37 claims
- 0396US9852783B1Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltagesQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·31 cites·30 claims
- 0496US9378781B1System, apparatus, and method for sense amplifiersQUALCOMM INC·Filed 2015·Granted Jun 28, 2016·25 cites·26 claims
- 0595US9728259B1Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense marginQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·21 cites·30 claims
- 0695US8432727B2Invalid write prevention for STT-MRAM arrayRYU KYUNGHO·Filed 2010·Granted Apr 30, 2013·70 cites·11 claims
- 0794US7764537B2Spin transfer torque magnetoresistive random access memory and design methodsQUALCOMM INC·Filed 2008·Granted Jul 27, 2010·31 cites·20 claims
- 0893US7417482B2Adaptive voltage scaling for an electronics deviceQUALCOMM INC·Filed 2005·Granted Aug 26, 2008·66 cites·22 claims
- 0993US7324394B1Single data line sensing scheme for TCCT-based memory cellsT RAM SEMICONDUCTOR INC·Filed 2006·Granted Jan 29, 2008·29 cites·13 claims
- 1092US10319425B1Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuitsQUALCOMM INC·Filed 2018·Granted Jun 11, 2019·15 cites·26 claims
- 1191US9800271B2Error correction and decodingQUALCOMM INC·Filed 2015·Granted Oct 24, 2017·8 cites·27 claims
- 1291US9496027B2Static random access memory device including write assist circuit and writing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 15, 2016·15 cites·20 claims
- 1391US9035684B2Delay locked loop and method of generating clockUNIV YONSEI IACF·Filed 2014·Granted May 19, 2015·12 cites·19 claims
- 1490US10803942B1Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methodsQUALCOMM TECH INCORPORATED·Filed 2019·Granted Oct 13, 2020·19 cites·32 claims
- 1590US10746543B2Apparatus for measuring distance using two-step tracking based on SPAD sensor and method thereofINDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIV·Filed 2018·Granted Aug 18, 2020·3 cites·11 claims
- 1690US10290340B1Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operationQUALCOMM INC·Filed 2018·Granted May 14, 2019·11 cites·30 claims
- 1790US9666259B1Dual mode sensing schemeQUALCOMM INC·Filed 2016·Granted May 30, 2017·11 cites·30 claims
- 1890US7721236B2Method and apparatus of estimating circuit delayQUALCOMM INC·Filed 2006·Granted May 18, 2010·29 cites·20 claims
- 1989US7813166B2Controlled value reference signal of resistance based memory circuitQUALCOMM INC·Filed 2008·Granted Oct 12, 2010·23 cites·19 claims
- 2089US6958931B1Bit line control and sense amplification for TCCT-based memory cellsT RAM INC·Filed 2002·Granted Oct 25, 2005·41 cites·26 claims
- 2188US9583178B2SRAM read preferred bit cell with write assist circuitQUALCOMM INC·Filed 2013·Granted Feb 28, 2017·12 cites·18 claims
- 2288US9336863B2Dual write wordline memory cellQUALCOMM INC·Filed 2014·Granted May 10, 2016·11 cites·30 claims
- 2386US10008270B2Non-volatile memory device and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·8 cites·19 claims
- 2486US9111635B2Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methodsQUALCOMM INC·Filed 2013·Granted Aug 18, 2015·8 cites·19 claims
- 2584US9196337B2Low sensing current non-volatile flip-flopJUNG SEONG-OOK·Filed 2012·Granted Nov 24, 2015·10 cites·8 claims
- 2684US8406064B2Latching circuitJUNG SEONG-OOK·Filed 2010·Granted Mar 26, 2013·8 cites·20 claims
- 2784US7979832B2Process variation tolerant memory designQUALCOMM INC·Filed 2007·Granted Jul 12, 2011·14 cites·19 claims
- 2884US6903987B2Single data line sensing scheme for TCCT-based memory cellsT RAM INC·Filed 2002·Granted Jun 7, 2005·23 cites·32 claims
- 2983US9390779B2System and method of sensing a memory cellQUALCOMM INC·Filed 2013·Granted Jul 12, 2016·8 cites·38 claims
- 3082US10855101B2Apparatus for harvesting energy using dual environment energy source and method thereofUNIV YONSEI IACF·Filed 2018·Granted Dec 1, 2020·4 cites·10 claims
- 3182US10263645B2Error correction and decodingQUALCOMM INC·Filed 2017·Granted Apr 16, 2019·4 cites·22 claims
- 3282US9406354B1System, apparatus, and method for an offset cancelling single ended sensing circuitQUALCOMM INC·Filed 2015·Granted Aug 2, 2016·6 cites·19 claims
- 3382US7755964B2Memory device with configurable delay trackingQUALCOMM INC·Filed 2006·Granted Jul 13, 2010·14 cites·23 claims
- 3482US6735113B2Circuit and method for implementing a write operation with TCCT-based memory cellsT RAM INC·Filed 2002·Granted May 11, 2004·30 cites·64 claims
- 3581US9281039B2System and method to provide a reference cell using magnetic tunnel junction cellsQUALCOMM INC·Filed 2013·Granted Mar 8, 2016·7 cites·31 claims
- 3680US9413236B2Voltage converterSK HYNIX INC·Filed 2014·Granted Aug 9, 2016·5 cites·20 claims
- 3779US9111623B1NMOS-offset canceling current-latched sense amplifierQUALCOMM INC·Filed 2014·Granted Aug 18, 2015·6 cites·20 claims
- 3879US8154903B2Split path sensing circuitJUNG SEONG-OOK·Filed 2009·Granted Apr 10, 2012·11 cites·42 claims
- 3978US10319434B2Static random access memory cell capable of performing differential operationUNIV YONSEI IACF·Filed 2018·Granted Jun 11, 2019·5 cites·15 claims
- 4078US9875788B2Low-power 5T SRAM with improved stability and reduced bitcell sizeJUNG SEONG-OOK·Filed 2010·Granted Jan 23, 2018·8 cites·26 claims
- 4178US9502088B2Constant sensing current for reading resistive memoryQUALCOMM INC·Filed 2014·Granted Nov 22, 2016·6 cites·18 claims
- 4277US9989582B2Device for measuring threshold voltage of a transistor based on constant drain voltage and constant drain source currentSK HYNIX INC·Filed 2016·Granted Jun 5, 2018·3 cites·20 claims
- 4377US8670266B2Non-volatile flip-flopJUNG SEONG-OOK·Filed 2012·Granted Mar 11, 2014·6 cites·26 claims
- 4477US8335101B2Resistance-based memory with reduced voltage input/output deviceJUNG SEONG-OOK·Filed 2010·Granted Dec 18, 2012·6 cites·53 claims
- 4576US8447547B2Static noise margin estimationJUNG SEONG-OOK·Filed 2009·Granted May 21, 2013·11 cites·37 claims
- 4675US9691462B2Latch offset cancelation for magnetoresistive random access memoryQUALCOMM INC·Filed 2014·Granted Jun 27, 2017·5 cites·17 claims
- 4775US6188619B1Memory device with address translation for skipping failed memory blocksSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 13, 2001·34 cites·10 claims
- 4874US6721220B2Bit line control and sense amplification for TCCT-based memory cellsT RAM INC·Filed 2002·Granted Apr 13, 2004·17 cites·53 claims
- 4973US9165630B2Offset canceling dual stage sensing circuitQUALCOMM INC·Filed 2013·Granted Oct 20, 2015·4 cites·20 claims
- 5072US7812582B2System and method of power distribution control of an integrated circuitQUALCOMM INC·Filed 2006·Granted Oct 12, 2010·11 cites·43 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →