Inventor · disambiguated record
Seung Pil Ko
Also filed as: KO SEUNG PIL
21 granted patents·5 pending applications·214 citations·filing 2007–2024
94Inventor score
Top patents by PatentIndex Score
26 records- 0196US7541252B2Methods of fabricating a semiconductor device including a self-aligned cell diodeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·101 cites·19 claims
- 0291US7778079B2Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·26 cites·26 claims
- 0390US7701749B2Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 20, 2010·21 cites·26 claims
- 0489US11690231B2Semiconductor data storage devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 27, 2023·2 cites·19 claims
- 0588US10283698B2Semiconductor devices and methods of fabricating the sameKO SEUNG PIL·Filed 2017·Granted May 7, 2019·9 cites·18 claims
- 0687US10804320B2Insulation layer arrangement for magnetic tunnel junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 13, 2020·6 cites·18 claims
- 0784US9543357B2Magnetoresistive random access memory devices and methods of manufacturing the sameKO SEUNG-PIL·Filed 2015·Granted Jan 10, 2017·6 cites·19 claims
- 0884US7906773B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 15, 2011·13 cites·17 claims
- 0981US10818727B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·3 cites·20 claims
- 1080US8199567B2Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devicesCHANG-WOOK JEONG·Filed 2011·Granted Jun 12, 2012·9 cites·9 claims
- 1176US7940552B2Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·9 cites·11 claims
- 1275US12089420B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 1370US7939366B2Phase change memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·7 cites·10 claims
- 1463US8772096B2Method of forming a contact and method of manufacturing a phase change memory device using the sameKO SEUNG-PIL·Filed 2012·Granted Jul 8, 2014·1 cites·20 claims
- 1562US2024365562A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1661US11462584B2Insulation layer arrangement for magnetic tunnel junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 1760US2025079302A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1859US11271038B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 1957US10504902B2Data storage devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 10, 2019·1 cites·20 claims
- 2053US2023371276A1Magnetic memory device and electronic device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2150US2024324240A1Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2247US12112783B2Magnetic memory device with a plurality of capping layersSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·18 claims
- 2346US9012877B2Semiconductor device including a diode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Apr 21, 2015·0 cites·16 claims
- 2446US8969996B2Semiconductor device with buried word line structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 3, 2015·0 cites·8 claims
- 2540US10573806B1Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 25, 2020·0 cites·20 claims
- 2640US2013109148A1Methods of forming a pattern and methods of manufacturing semiconductor devices using the sameOH GYU-HWAN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →