Inventor · disambiguated record
Sean T. Ma
Also filed as: MA SEAN · MA SEAN T
82 granted patents·13 pending applications·67 citations·filing 2015–2024
98Inventor score
Top patents by PatentIndex Score
95 records- 0198US11923410B2Transistor with isolation below source and drainINTEL CORP·Filed 2021·Granted Mar 5, 2024·4 cites·23 claims
- 0296US11862730B2Top-gate doped thin film transistorINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0393US11450738B2Source/drain regions in integrated circuit structuresINTEL CORP·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 0493US11362215B2Top-gate doped thin film transistorINTEL CORP·Filed 2018·Granted Jun 14, 2022·6 cites·21 claims
- 0592US11527612B2Gate-all-around integrated circuit structures having vertically discrete source or drain structuresINTEL CORP·Filed 2018·Granted Dec 13, 2022·6 cites·13 claims
- 0690US11482524B2Gate spacing in integrated circuit structuresINTEL CORP·Filed 2020·Granted Oct 25, 2022·2 cites·20 claims
- 0790US11404319B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2017·Granted Aug 2, 2022·5 cites·20 claims
- 0890US11367722B2Stacked nanowire transistor structure with different channel geometries for stressINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·22 claims
- 0990US10892335B2Device isolation by fixed chargeINTEL CORP·Filed 2016·Granted Jan 12, 2021·6 cites·20 claims
- 1086US11171207B2Transistor with isolation below source and drainINTEL CORP·Filed 2017·Granted Nov 9, 2021·3 cites·20 claims
- 1183US11398560B2Contact electrodes and dielectric structures for thin film transistorsINTEL CORP·Filed 2018·Granted Jul 26, 2022·3 cites·17 claims
- 1283US10411007B2High mobility field effect transistors with a band-offset semiconductor source/drain spacerINTEL CORP·Filed 2015·Granted Sep 10, 2019·3 cites·15 claims
- 1382US12376353B2Source/drain regions in integrated circuit structuresINTEL CORP·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1482US11538808B2Structures and methods for memory cellsINTEL CORP·Filed 2018·Granted Dec 27, 2022·4 cites·25 claims
- 1581US11984487B2Non-planar transistor arrangements with asymmetric gate enclosuresINTEL CORP·Filed 2020·Granted May 14, 2024·1 cites·20 claims
- 1681US11257904B2Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2018·Granted Feb 22, 2022·2 cites·25 claims
- 1780US12288803B2Transistor with isolation below source and drainINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1880US11469323B2Ferroelectric gate stack for band-to-band tunneling reductionINTEL CORP·Filed 2018·Granted Oct 11, 2022·2 cites·15 claims
- 1976US11916106B2Source/drain regions in integrated circuit structuresINTEL CORP·Filed 2022·Granted Feb 27, 2024·0 cites·27 claims
- 2075US10340374B2High mobility field effect transistors with a retrograded semiconductor source/drainINTEL CORP·Filed 2015·Granted Jul 2, 2019·2 cites·13 claims
- 2174US12328864B23D 1T1C stacked dram structure and method to fabricateINTEL CORP·Filed 2023·Granted Jun 10, 2025·0 cites·18 claims
- 2273US12328936B2Gate spacing in integrated circuit structuresINTEL CORP·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 2373US12211898B2Device contact sizing in integrated circuit structuresINTEL CORP·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 2473US11929435B2Ferroelectric gate stack for band-to-band tunneling reductionINTEL CORP·Filed 2022·Granted Mar 12, 2024·0 cites·22 claims
- 2573US11672133B2Vertically stacked memory elements with air gapINTEL CORP·Filed 2019·Granted Jun 6, 2023·1 cites·19 claims
- 2673US11335789B2Channel structures for thin-film transistorsINTEL CORP·Filed 2018·Granted May 17, 2022·1 cites·25 claims
- 2773US10651313B2Reduced transistor resistance using doped layerINTEL CORP·Filed 2016·Granted May 12, 2020·1 cites·23 claims
- 2872US11522060B2Epitaxial layers on contact electrodes for thin- film transistorsINTEL CORP·Filed 2018·Granted Dec 6, 2022·1 cites·24 claims
- 2972US11245038B2Vertical multi-gate thin film transistorsINTEL CORP·Filed 2017·Granted Feb 8, 2022·1 cites·25 claims
- 3071US11996447B2Field effect transistors with gate electrode self-aligned to semiconductor finINTEL CORP·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 3171US11658072B2Vertically stacked transistors in a finINTEL CORP·Filed 2021·Granted May 23, 2023·0 cites·20 claims
- 3270US12100623B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2022·Granted Sep 24, 2024·0 cites·17 claims
- 3370US11881517B2Channel structures for thin-film transistorsINTEL CORP·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 3470US11862729B2Vertical multi-gate thin film transistorsINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 3570US11756998B2Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 3670US11749715B2Isolation regions in integrated circuit structuresINTEL CORP·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 3769US11527613B2Removal of a bottom-most nanowire from a nanowire device stackINTEL CORP·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 3869US11450736B2Source/drain regions in integrated circuit structuresINTEL CORP·Filed 2020·Granted Sep 20, 2022·0 cites·23 claims
- 3968US12142689B2Transistor including wrap around source and drain contactsINTEL CORP·Filed 2022·Granted Nov 12, 2024·0 cites·19 claims
- 4068US10957769B2High-mobility field effect transistors with wide bandgap fin claddingINTEL CORP·Filed 2016·Granted Mar 23, 2021·1 cites·20 claims
- 4168US2023074199A1Gate-all-around integrated circuit structures having vertically discrete source or drain structuresINTEL CORP·Filed 2022·Application pending·0 cites
- 4267US11670682B2FINFET transistor having a doped sub fin structure to reduce channel to substrate leakageTAHOE RES LTD·Filed 2021·Granted Jun 6, 2023·0 cites·14 claims
- 4366US10529808B2Dopant diffusion barrier for source/drain to curb dopant atom diffusionINTEL CORP·Filed 2016·Granted Jan 7, 2020·1 cites·21 claims
- 4464US11430866B2Device contact sizing in integrated circuit structuresINTEL CORP·Filed 2020·Granted Aug 30, 2022·0 cites·18 claims
- 4564US11342409B2Isolation regions in integrated circuit structuresINTEL CORP·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 4663US2025380457A1Method for forming a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4758US11476366B2Transistor including wrap around source and drain contactsINTEL CORP·Filed 2018·Granted Oct 18, 2022·0 cites·7 claims
- 4857US11075119B2Vertically stacked transistors in a pinINTEL CORP·Filed 2017·Granted Jul 27, 2021·0 cites·19 claims
- 4956US10892326B2Removal of a bottom-most nanowire from a nanowire device stackINTEL CORP·Filed 2017·Granted Jan 12, 2021·0 cites·20 claims
- 5055US11849572B23D 1T1C stacked DRAM structure and method to fabricateINTEL CORP·Filed 2019·Granted Dec 19, 2023·0 cites·14 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →