Inventor · disambiguated record
Seiji Momota
Also filed as: MOMOTA SEIJI
26 granted patents·1 pending application·169 citations·filing 1995–2023
95Inventor score
Top patents by PatentIndex Score
27 records- 0189US6737705B2Insulated gate semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2001·Granted May 18, 2004·58 cites·5 claims
- 0286US9236460B2Semiconductor device having a diffusion regionFUJI ELECTRIC CO LTD·Filed 2013·Granted Jan 12, 2016·13 cites·14 claims
- 0383US9466711B2Semiconductor deviceMOMOTA SEIJI·Filed 2009·Granted Oct 11, 2016·9 cites·18 claims
- 0480US12477815B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·29 claims
- 0580US11239234B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Feb 1, 2022·2 cites·18 claims
- 0678US6559023B2Method of fabricating a semiconductor device with phosphorous and boron ion implantation, and by annealing to control impurity concentration thereofFUJI ELECTRIC CO LTD·Filed 2002·Granted May 6, 2003·26 cites·18 claims
- 0772US11810914B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·4 claims
- 0868US10003249B2Insulated gate semiconductor device including switchable insulated gate semiconductor elementFUJI ELECTRIC CO LTD·Filed 2015·Granted Jun 19, 2018·2 cites·13 claims
- 0966US12426289B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 1066US11749675B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·5 claims
- 1166US9761663B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Sep 12, 2017·1 cites·10 claims
- 1266US9059238B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Jun 16, 2015·3 cites·9 claims
- 1366US5559355AVertical MOS semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1995·Granted Sep 24, 1996·27 cites·8 claims
- 1465US6621120B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Sep 16, 2003·13 cites·8 claims
- 1563US8253222B2Semiconductor device and fabrication method of semiconductor deviceMOMOTA SEIJI·Filed 2011·Granted Aug 28, 2012·2 cites·3 claims
- 1662US8309409B2Method for fabricating trench gate to prevent on voltage parasetic influencesMOMOTA SEIJI·Filed 2011·Granted Nov 13, 2012·2 cites·9 claims
- 1759US8198697B2Semiconductor deviceMOMOTA SEIJI·Filed 2010·Granted Jun 12, 2012·1 cites·11 claims
- 1855US10916541B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 9, 2021·0 cites·6 claims
- 1953US11855077B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Dec 26, 2023·0 cites·15 claims
- 2053US2024128320A1Semiconductor device and manufacturing methodFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 2150US7151297B2Insulated gate semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted Dec 19, 2006·4 cites·2 claims
- 2246US9437678B2Fabrication method of semiconductor device, evaluation method of semiconductor device, and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Sep 6, 2016·0 cites·9 claims
- 2346US7462911B2Insulated gate semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted Dec 9, 2008·0 cites·6 claims
- 2445US8691635B2Fabrication method of semiconductor deviceMOMOTA SEIJI·Filed 2012·Granted Apr 8, 2014·0 cites·7 claims
- 2541US9443942B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Sep 13, 2016·0 cites·10 claims
- 2638US9941397B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Apr 10, 2018·0 cites·11 claims
- 2735US5869372AMethod of manufacturing a power semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1995·Granted Feb 9, 1999·6 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →