Inventor · disambiguated record
Seiji Nagai
Also filed as: NAGAI SEIJI
45 granted patents·6 pending applications·1,386 citations·filing 1975–2025
98Inventor score
Top patents by PatentIndex Score
51 records- 0197US7491984B2Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2004·Granted Feb 17, 2009·170 cites·11 claims
- 0297US6645295B1Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Nov 11, 2003·112 cites·9 claims
- 0396US6040588ASemiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Mar 21, 2000·112 cites·10 claims
- 0495US6420733B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2001·Granted Jul 16, 2002·80 cites·7 claims
- 0595US6326236B1Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2000·Granted Dec 4, 2001·78 cites·2 claims
- 0694US6541293B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 1, 2003·63 cites·4 claims
- 0790US7052979B2Production method for semiconductor crystal and semiconductor luminous elementTOYODA GOSEI KK·Filed 2002·Granted May 30, 2006·56 cites·5 claims
- 0888US5805790AFault recovery method and apparatusHITACHI LTD·Filed 1996·Granted Sep 8, 1998·177 cites·20 claims
- 0987US6861305B2Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2001·Granted Mar 1, 2005·34 cites·30 claims
- 1087US6821800B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Nov 23, 2004·29 cites·4 claims
- 1184US4783783AData processing system having pipeline arithmetic/logic unitsHITACHI LTD·Filed 1986·Granted Nov 8, 1988·93 cites·5 claims
- 1282US7141444B2Production method of III nitride compound semiconductor and III nitride compound semiconductor elementTOYODA GOSEI KK·Filed 2001·Granted Nov 28, 2006·27 cites·10 claims
- 1380US8507364B2N-type group III nitride-based compound semiconductor and production method thereforNAGAI SEIJI·Filed 2009·Granted Aug 13, 2013·4 cites·11 claims
- 1480US6471770B2Method of manufacturing semiconductor substrateTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·20 cites·10 claims
- 1576US6855620B2Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devicesTOYODA GOSEI KK·Filed 2001·Granted Feb 15, 2005·20 cites·22 claims
- 1676US6679947B2Semiconductor substrateTOYODA GOSEI KK·Filed 2002·Granted Jan 20, 2004·15 cites·6 claims
- 1775US5889806AGroup III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Mar 30, 1999·39 cites·7 claims
- 1874US6680957B1Group III nitride compound semiconductor laserTOYODA GOSEI KK·Filed 2000·Granted Jan 20, 2004·12 cites·21 claims
- 1973US5615001AMulticolor image forming apparatusFUJITSU LTD·Filed 1995·Granted Mar 25, 1997·26 cites·26 claims
- 2072US7163876B2Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2002·Granted Jan 16, 2007·15 cites·17 claims
- 2170US9567693B2Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2013·Granted Feb 14, 2017·2 cites·13 claims
- 2267US8501141B2Method for producing group III nitride semiconductorSATO TAKAYUKI·Filed 2010·Granted Aug 6, 2013·2 cites·16 claims
- 2367US5811319AMethods of forming electrodes on gallium nitride group compound semiconductorsTOYODA GOSEI KK·Filed 1996·Granted Sep 22, 1998·26 cites·14 claims
- 2466US7011707B2Production method for semiconductor substrate and semiconductor elementTOYODA GOSEI KK·Filed 2002·Granted Mar 14, 2006·11 cites·40 claims
- 2565US3988938AGate motion mechanismMITSUBISHI HEAVY IND LTD·Filed 1975·Granted Nov 2, 1976·16 cites·5 claims
- 2664US9263258B2Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor deviceNAGAI SEIJI·Filed 2009·Granted Feb 16, 2016·2 cites·20 claims
- 2764US6844246B2Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on itTOYODA GOSEI KK·Filed 2002·Granted Jan 18, 2005·10 cites·13 claims
- 2864US6790279B2Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2002·Granted Sep 14, 2004·7 cites·18 claims
- 2962US6284045B1Apparatus for building unburned refractorySHINAGAWA REFRACTORIES CO·Filed 1998·Granted Sep 4, 2001·9 cites·15 claims
- 3062US5953581AMethods for manufacturing group III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Sep 14, 1999·24 cites·5 claims
- 3162US4695167AApparatus for mixing and pumping slurrySHINAGAWA REFRACTORIES CO·Filed 1985·Granted Sep 22, 1987·21 cites·1 claims
- 3261US9388506B2Semiconductor crystal removal apparatus and production method for semiconductor crystalTOYODA GOSEI KK·Filed 2013·Granted Jul 12, 2016·0 cites·8 claims
- 3361US5267350AMethod for fetching plural instructions using single fetch request in accordance with empty state of instruction buffers and setting of flag latchesMATSUBARA KENJI·Filed 1990·Granted Nov 30, 1993·46 cites·4 claims
- 3461US2025369153A1Method for manufacturing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 3559US6964705B2Method for producing semiconductor crystalTOYODA GOSEI KK·Filed 2003·Granted Nov 15, 2005·6 cites·10 claims
- 3652US7708833B2Crystal growing apparatusTOYODA GOSEI KK·Filed 2008·Granted May 4, 2010·0 cites·20 claims
- 3752US6716655B2Group III nitride compound semiconductor element and method for producing the sameTOYODA GOSEI KK·Filed 2002·Granted Apr 6, 2004·3 cites·8 claims
- 3852US4421697AMethod and apparatus for casting an inner lining amorphous refractory into a molten metal vesselNIPPON KOKAN KK·Filed 1982·Granted Dec 20, 1983·7 cites·6 claims
- 3951US8361222B2Method for producing group III nitride-based compound semiconductorTOYODA GOSEI KK·Filed 2008·Granted Jan 29, 2013·0 cites·11 claims
- 4050US9153439B2Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2014·Granted Oct 6, 2015·0 cites·18 claims
- 4150US8216365B2Method for producing a semiconductor crystalNAGAI SEIJI·Filed 2008·Granted Jul 10, 2012·0 cites·18 claims
- 4250US2009310328A1Folding electronic device and device for reducing undesired play in hinge deviceFUJITSU LTD·Filed 2009·Application pending·0 cites
- 4349US9358510B2Planetary mixerINOUE MFG INC·Filed 2013·Granted Jun 7, 2016·0 cites·20 claims
- 4447US2011259261A1Reaction vessel for growing single crystal and method for growing single crystalNGK INSULATORS LTD·Filed 2011·Application pending·0 cites
- 4547US2017081780A1METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATETOYODA GOSEI KK·Filed 2016·Application pending·0 cites
- 4643US9691610B2Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2014·Granted Jun 27, 2017·0 cites·17 claims
- 4743US6486068B2Method for manufacturing group III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1998·Granted Nov 26, 2002·10 cites·15 claims
- 4841US2004107891A1Method for producing group III nitride compound semiconductor substrateTOYODA GOSEI KK·Filed 2003·Application pending·0 cites
- 4939US2004012701A1Portable electronic device and imaging systemFUJITSU LTD·Filed 2003·Application pending·0 cites
- 5038US9346027B2Planetary mixerINOUE MASAKAZU·Filed 2012·Granted May 24, 2016·0 cites·13 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →