Inventor · disambiguated record
Seunggeol Nam
Also filed as: NAM SEUNGGEOL
39 granted patents·40 pending applications·41 citations·filing 2015–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD79
Top patents by PatentIndex Score
79 records- 0195US10790356B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 29, 2020·7 cites·19 claims
- 0292US11342414B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 0392US10217819B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 26, 2019·6 cites·16 claims
- 0490US11996150B2Non-volatile content addressable memory device having simple cell configuration and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 28, 2024·2 cites·28 claims
- 0590US11088077B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 10, 2021·2 cites·9 claims
- 0689US12119060B2Content-addressable memory and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
- 0788US10559660B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 11, 2020·3 cites·14 claims
- 0886US10134628B2Multilayer structure including diffusion barrier layer and device including the multilayer structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·4 cites·28 claims
- 0984US10850985B2Method of forming nanocrystalline graphene, and device including nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 1, 2020·3 cites·18 claims
- 1083US11624127B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·1 cites·20 claims
- 1181US11069619B2Interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·3 cites·11 claims
- 1279US12139814B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 1378US12040360B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·16 claims
- 1478US11984514B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 1578US2025066950A1Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1677US10217513B2Phase change memory devices including two-dimensional material and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 26, 2019·4 cites·41 claims
- 1776US12107140B2Thin film structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1876US2025107208A1Semiconductor device and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1976US2024266445A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2076US2024265967A1Non-volatile content addressable memory device having simple cell configuration and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2175US11764156B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·6 claims
- 2274US11699765B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·25 claims
- 2374US2025176259A1Complementary metal oxide semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2474US2025015184A1Ferroelectric semiconductor device and method of extracting defect density of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2574US2025142936A1Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2670US10229881B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 12, 2019·1 cites·17 claims
- 2769US12453106B2Capacitor device and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·17 claims
- 2869US12132109B2Ferroelectric semiconductor device and method of extracting defect density of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·17 claims
- 2969US10199469B2Semiconductor device including metal-semiconductor junctionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·1 cites·20 claims
- 3069US2025185309A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3168US12218217B2Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·26 claims
- 3268US11676999B2Electronic devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·31 claims
- 3368US2025142835A1Semiconductor device, memory device, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3468US2025201305A1Vertical non-volatile memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3567US12199165B2Semiconductor device and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·24 claims
- 3667US2025126803A1Semiconductor device, and memory apparatus and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3766US11804536B2Thin film structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·43 claims
- 3866US11799010B2Transistor including electride electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 3966US2025176186A1Semiconductor device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4063US2025220977A1Semiconductor device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4163US2025185308A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4263US2025126802A1Ferroelectric field effect transistor, memory device, and neural network deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4362US12382704B2Semiconductor device and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·26 claims
- 4462US10790230B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·0 cites·14 claims
- 4562US10727182B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 28, 2020·0 cites·14 claims
- 4661US2025126875A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4760US12205951B2Complementary metal oxide semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·24 claims
- 4860US2024081080A1Ferroelectric semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4959US11149346B2Method of directly growing carbon material on substrateSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·23 claims
- 5059US11004949B2Transistor including electride electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·0 cites·18 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Seunggeol Nam files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →