Inventor · disambiguated record
Seung-Cheol Oh
Also filed as: OH SEUNG C · OH SEUNG CHEOL
20 granted patents·426 citations·filing 1993–2013
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD10NANOAMP SOLUTIONS INC5LG DISPLAY CO LTD3OH SEUNG-CHEOL1SAMSUNG DISPLAY DEVICES CO LTD1
Top patents by PatentIndex Score
20 records- 0189US6741515B2DRAM with total self refresh and control circuitNANOAMP SOLUTIONS INC·Filed 2002·Granted May 25, 2004·63 cites·32 claims
- 0283US5412331AWord line driving circuit of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted May 2, 1995·56 cites·9 claims
- 0382US8736532B2Liquid crystal display device having a 1-dot inversion or 2-dot inversion scheme and method thereofOH SEUNG-CHEOL·Filed 2011·Granted May 27, 2014·6 cites·9 claims
- 0482US5461587ARow redundancy circuit and method for a semiconductor memory device with a double row decoderSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Oct 24, 1995·49 cites·8 claims
- 0580US9443463B2Display device with dummy lines for reducing a number of channels of a gate driver integrated circuitLG DISPLAY CO LTD·Filed 2013·Granted Sep 13, 2016·3 cites·9 claims
- 0678US6735142B1Power-up control circuit with a power-saving mode of operationNANOAMP SOLUTIONS INC·Filed 2002·Granted May 11, 2004·27 cites·11 claims
- 0776US5355339ARow redundancy circuit of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Oct 11, 1994·43 cites·11 claims
- 0874US9483131B2Liquid crystal display and method of driving the sameLG DISPLAY CO LTD·Filed 2012·Granted Nov 1, 2016·2 cites·13 claims
- 0974US6064622AColumn select line control circuit for synchronous semiconductor memory device and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 16, 2000·34 cites·8 claims
- 1074US5396465ACircuit for controlling isolation transistors in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Mar 7, 1995·34 cites·8 claims
- 1160US5793074AMetal oxide semiconductor capacitors having uniform C-V characteristics over an operating range and reduced susceptibility to insulator breakdownSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 11, 1998·20 cites·8 claims
- 1255US5877652AVoltage detecting circuit and method for reduced power consumptionSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 2, 1999·18 cites·15 claims
- 1353US5959904ADynamic column redundancy driving circuit for synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 28, 1999·15 cites·1 claims
- 1451US9396688B2Image display device and method for driving the sameLG DISPLAY CO LTD·Filed 2013·Granted Jul 19, 2016·0 cites·11 claims
- 1550US6721210B1Voltage boosting circuit for a low power semiconductor memoryNANOAMP SOLUTIONS INC·Filed 2002·Granted Apr 13, 2004·7 cites·13 claims
- 1649US5754075AIntegrated circuits including power supply boosters and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 19, 1998·12 cites·23 claims
- 1747US6060942AVoltage boosting power supply circuit of memory integrated circuit and method for controlling charge amount of voltage boosting power supplySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 9, 2000·10 cites·20 claims
- 1842US5818431AInput/output signal transmitting stylusSAMSUNG DISPLAY DEVICES CO LTD·Filed 1995·Granted Oct 6, 1998·22 cites·11 claims
- 1941US6981187B1Test mode for a self-refreshed SRAM with DRAM memory cellsNANOAMP SOLUTIONS INC·Filed 2002·Granted Dec 27, 2005·3 cites·3 claims
- 2037US6643216B1Asynchronous queuing circuit for DRAM external RAS accessesNANOAMP SOLUTIONS INC·Filed 2002·Granted Nov 4, 2003·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →