Inventor · disambiguated record
Seonggeon Park
Also filed as: PARK SEONGGEON
7 granted patents·8 pending applications·1 citations·filing 2013–2025
71Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15
Top patents by PatentIndex Score
15 records- 0191US12052930B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 30, 2024·1 cites·27 claims
- 0288US2025344609A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0383US2024334840A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0482US12310250B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 0582US2025261565A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0681US12382839B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·31 claims
- 0769US12245518B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 0863US2025169371A1Magnetic tunnel junction element and memory device including magnetic tunnel junction elementSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0962US2025127061A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1061US12150387B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 1153US12481435B2Field programmable gate array device including spin orbit torque-magnetic random access memory and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 1252US2025331426A1Magnetic memory device including a magnetic tunnel junctionSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1347US2024365678A1Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1442US2023019156A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1537US9378811B2Methods of operating variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 28, 2016·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →