Inventor · disambiguated record
Seong-Geon Park
Also filed as: PARK SEONG HYUNG · PARK SEONG-GEON
19 granted patents·11 pending applications·165 citations·filing 2001–2020
93Inventor score
Top patents by PatentIndex Score
30 records- 0193US10186552B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 22, 2019·11 cites·20 claims
- 0292US7081409B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·50 cites·19 claims
- 0391US7098131B2Methods for forming atomic layers and thin films including tantalum nitride and devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·48 cites·25 claims
- 0487US7833855B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 16, 2010·10 cites·33 claims
- 0587US7452811B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·10 cites·10 claims
- 0682US7223689B2Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·14 claims
- 0776US10236444B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 19, 2019·2 cites·18 claims
- 0876US8785899B2Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodesJU HYUN-SU·Filed 2012·Granted Jul 22, 2014·5 cites·15 claims
- 0965US9293700B2Nonvolatile memory cell and nonvolatile memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 22, 2016·1 cites·14 claims
- 1063US7531881B2Semiconductor devices having transistors with different gate structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·2 cites·14 claims
- 1162US7056776B2Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·8 cites·40 claims
- 1261US7105444B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·6 cites·53 claims
- 1359US10403818B2Method of forming semiconductor devices having threshold switching devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·1 cites·9 claims
- 1457US10636968B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 1556US11037988B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 15, 2021·0 cites·7 claims
- 1654US6806135B2Method of manufacturing a semiconductor device using a two-step deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 19, 2004·5 cites·17 claims
- 1753US2007197015A1Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1852US7892958B2Methods of fabricating semiconductor devices having transistors with different gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·0 cites·4 claims
- 1950US2006251812A1Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the sameKANG SANG-BOM·Filed 2006·Application pending·0 cites
- 2048US10714685B2Methods of forming semiconductor devices having threshold switching devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 2145US2019013357A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 2244US7399670B2Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·0 cites·19 claims
- 2343US2007269974A1Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerPARK HEE-SOOK·Filed 2007·Application pending·0 cites
- 2442US2004043601A1Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerFiled 2003·Application pending·0 cites
- 2538US2006151826A1Semiconductor device having a barrier layer and method of manufacturing the sameJIN BEOM-JUN·Filed 2006·Application pending·0 cites
- 2637US2002092471A1Semiconductor deposition apparatus and shower headSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 2736US2002135071A1Integrated circuit device contact plugs having a liner layer that exerts compressive stress thereon and methods of manufacturing sameFiled 2002·Application pending·0 cites
- 2836US2004094838A1Method for forming metal wiring layer of semiconductor deviceFiled 2003·Application pending·0 cites
- 2934US2002024103A1Structure of borderless contact and fabricating method thereofFiled 2001·Application pending·0 cites
- 3034US2007059929A1Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →