Inventor · disambiguated record
Sergiy Romanovskyy
Also filed as: ROMANOVSKYY SERGIY
21 granted patents·62 citations·filing 2007–2023
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG8TAIWAN SEMICONDUCTOR MFG CO LTD8ROMANOVSKYY SERGIY4NUMMER MUHAMMAD1
Top patents by PatentIndex Score
21 records- 0189US9230631B2Differential current sensing scheme for magnetic random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 5, 2016·8 cites·20 claims
- 0288US8995180B2Magnetoresistive random access memory (MRAM) differential bit cell and method of useTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 31, 2015·10 cites·20 claims
- 0386US8976613B2Differential current sensing scheme for magnetic random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·7 cites·20 claims
- 0479US9685217B2Memory device with over-refresh and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 20, 2017·10 cites·18 claims
- 0577US7590017B2DRAM bitline precharge schemeTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 15, 2009·12 cites·22 claims
- 0673US9916883B2Magnetic random access memory using current sense amplifier for reading cell data and related methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 13, 2018·2 cites·20 claims
- 0772US9613672B2Differential current sensing scheme for magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 0869US12315552B2Word line delay interlock circuit for write operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 0967US9529673B2Memory device having adjustable refresh period and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 27, 2016·3 cites·23 claims
- 1058US8837249B2Memory macro configuration and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 16, 2014·1 cites·20 claims
- 1158US8611163B2Digital DLL for timing control in semiconductor memoryROMANOVSKYY SERGIY·Filed 2011·Granted Dec 17, 2013·2 cites·20 claims
- 1257US8995219B2Word line driverROMANOVSKYY SERGIY·Filed 2012·Granted Mar 31, 2015·2 cites·20 claims
- 1352US8363488B2Reference voltage regulator for eDRAM with VSS-sensingTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 29, 2013·1 cites·20 claims
- 1451US8988921B2Boosting word linesROMANOVSKYY SERGIY·Filed 2012·Granted Mar 24, 2015·1 cites·20 claims
- 1549US9431075B2Memory macro configuration and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·0 cites·20 claims
- 1649US8345498B2Sense amplifierTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 1, 2013·1 cites·20 claims
- 1744US9299921B2Magnetoresistive random access memory (MRAM) differential bit cell and method of useTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 29, 2016·0 cites·20 claims
- 1840US9515640B2Apparatuses and devices for bias level correctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·0 cites·20 claims
- 1936US8400852B2Circuit with remote amplifierROMANOVSKYY SERGIY·Filed 2011·Granted Mar 19, 2013·0 cites·22 claims
- 2035US10157664B2Memory controlling device by using multi-phase control signal and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·0 cites·18 claims
- 2131US8059475B2Reference voltage regulator for eDRAM with VSS-sensingNUMMER MUHAMMAD·Filed 2010·Granted Nov 15, 2011·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →