Inventor · disambiguated record
Seung-Mok Shin
Also filed as: SHIN SEUNG · SHIN SEUNG-MOK · SHIN SEUNG-WOO
17 granted patents·3 pending applications·199 citations·filing 1998–2024
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9ROCHE SEQUENCING SOLUTIONS INC3DO MI-SUN2SHIN SEUNG-MOK2JANG KYUNG-TAE1
Top patents by PatentIndex Score
20 records- 0191US8643084B2Vertical non-volatile memory deviceSHIN SEUNG-MOK·Filed 2011·Granted Feb 4, 2014·25 cites·15 claims
- 0290US9343475B2Vertical memory devices and methods of manufacturing the sameJANG KYUNG-TAE·Filed 2014·Granted May 17, 2016·19 cites·15 claims
- 0388US10935512B2Encoding state change of nanopore to reduce data sizeROCHE SEQUENCING SOLUTIONS INC·Filed 2015·Granted Mar 2, 2021·3 cites·19 claims
- 0485US2025102459A1Encoding state change of nanopore to reduce data sizeROCHE SEQUENCING SOLUTIONS INC·Filed 2024·Application pending·0 cites
- 0583US8976328B2Liquid crystal display device and method for fabricating the sameLG DISPLAY CO LTD·Filed 2012·Granted Mar 10, 2015·4 cites·6 claims
- 0681US6730570B2Method for forming a self-aligned contact of a semiconductor device and method for manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 4, 2004·33 cites·34 claims
- 0779US6251746B1Methods of forming trench isolation regions having stress-reducing nitride layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 26, 2001·66 cites·26 claims
- 0876US6828254B2Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 7, 2004·14 cites·7 claims
- 0974US12135306B2Encoding state change of nanopore to reduce data sizeROCHE SEQUENCING SOLUTIONS INC·Filed 2021·Granted Nov 5, 2024·0 cites·17 claims
- 1065US7592227B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·2 cites·22 claims
- 1162US6815370B2Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 9, 2004·4 cites·11 claims
- 1261US7342286B2Electrical node of transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 11, 2008·2 cites·25 claims
- 1356US6794263B1Method of manufacturing a semiconductor device including alignment markSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·8 cites·6 claims
- 1445US7101803B2Method of trench isolation and method for manufacturing a non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 5, 2006·1 cites·21 claims
- 1545US6881637B2Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·2 cites·19 claims
- 1644US8588235B2Method of providing multicast/broadcast service using WiBro/WiMAX network and system using the methodDO MI-SUN·Filed 2007·Granted Nov 19, 2013·0 cites·22 claims
- 1742US6549543B1Data communication system and data communication operating methodLG INF & COMM LTD·Filed 1998·Granted Apr 15, 2003·16 cites·33 claims
- 1838US8547978B2Method for providing MBS service in a WAN network, and system thereofDO MI-SUN·Filed 2007·Granted Oct 1, 2013·0 cites·15 claims
- 1934US2012068242A1Semiconductor devices and methods of fabricating the sameSHIN SEUNG-MOK·Filed 2011·Application pending·0 cites
- 2034US2002125519A1Capacitor of semiconductor device and manufacturing method for the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →